Abstract
Moiré superlattices characterized by their atomic-scale sliding ferroelectric (FE) ordering and tunable interfacial polarization properties have emerged as attractive building blocks for post-Moore's law electronics. However, its topological protection from domain wall networks results in antiferroelectric (AFE) volatile characteristics, a fundamental obstacle to practical device applications. Here, utilizing twisted boron nitride as a model system, we propose a regulation strategy based on mechanical stress engineering, which drives a domain wall transition from Σ0° to Σ30° configurations. Through this approach, the applied stress breaks the balance between anti-aligned dipoles and generates a double domain wall, therefore establishing a net out-of-plane polarization. Our approach achieves a phase transition from AFE to FE order, enabling stable nonvolatile polarization switching and paving the way for developing practical low-power nonvolatile memory devices based on moiré platforms.
| Original language | English |
|---|---|
| Journal | Advanced Functional Materials |
| DOIs | |
| State | Accepted/In press - 2026 |
Keywords
- ferroelectric
- moiré superlattice
- non-volatile
- twisted h-BN
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