Strain induced tunable anisotropic magnetoresistance in La 0.67Ca0.33MnO3/BaTiO3 heterostructures

Yali Xie; Huali Yang; Yiwei Liu; Zhihuan Yang; Bin Chen; Zhenghu Zuo; Sadhana Katlakunta; Qingfeng Zhan; Run Wei Li

doi:10.1063/1.4795841

Strain induced tunable anisotropic magnetoresistance in La _0.67Ca_0.33MnO₃/BaTiO₃ heterostructures

Yali Xie
, Huali Yang
, Yiwei Liu
, Zhihuan Yang
, Bin Chen
, Zhenghu Zuo
, Sadhana Katlakunta
, Qingfeng Zhan^*
, Run Wei Li

^*Corresponding author for this work

CAS - Ningbo Institute of Material Technology and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper, we investigated the influence of strain on anisotropic magnetoresistance (AMR) in La_0.67Ca_0.33MnO₃ (LCMO) films epitaxially grown on BaTiO₃(001). For 250-nm-thick LCMO film, the AMR shows a peak near the metal-insulator transition (MIT) temperature, which is similar to that in bulk LCMO. When the thickness of LCMO is decreased to 150 nm, the AMR value achieves a maximum at low temperature. For 80-nm-thick LCMO film, in addition to the appearance of the maximum AMR at low temperature, the symmetry and sign of AMR are also changed, associated with interface strain in the different phases of BaTiO₃. In comparison, the AMR for the reference LCMO films grown on SrTiO₃(001) shows a maximum value near the MIT temperature regardless of the thickness of film. Our experiment results suggest that not only the strain value but also the distortion type can considerably tune the AMR of LCMO films.

Original language	English
Article number	17C716
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4795841
State	Published - 7 May 2013
Externally published	Yes

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@article{53cd1cb5294e4306912a448bfa937cbc,

title = "Strain induced tunable anisotropic magnetoresistance in La 0.67Ca0.33MnO3/BaTiO3 heterostructures",

abstract = "In this paper, we investigated the influence of strain on anisotropic magnetoresistance (AMR) in La0.67Ca0.33MnO3 (LCMO) films epitaxially grown on BaTiO3(001). For 250-nm-thick LCMO film, the AMR shows a peak near the metal-insulator transition (MIT) temperature, which is similar to that in bulk LCMO. When the thickness of LCMO is decreased to 150 nm, the AMR value achieves a maximum at low temperature. For 80-nm-thick LCMO film, in addition to the appearance of the maximum AMR at low temperature, the symmetry and sign of AMR are also changed, associated with interface strain in the different phases of BaTiO3. In comparison, the AMR for the reference LCMO films grown on SrTiO3(001) shows a maximum value near the MIT temperature regardless of the thickness of film. Our experiment results suggest that not only the strain value but also the distortion type can considerably tune the AMR of LCMO films.",

author = "Yali Xie and Huali Yang and Yiwei Liu and Zhihuan Yang and Bin Chen and Zhenghu Zuo and Sadhana Katlakunta and Qingfeng Zhan and Li, \{Run Wei\}",

year = "2013",

month = may,

day = "7",

doi = "10.1063/1.4795841",

language = "英语",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Strain induced tunable anisotropic magnetoresistance in La 0.67Ca0.33MnO3/BaTiO3 heterostructures

AU - Xie, Yali

AU - Yang, Huali

AU - Liu, Yiwei

AU - Yang, Zhihuan

AU - Chen, Bin

AU - Zuo, Zhenghu

AU - Katlakunta, Sadhana

AU - Zhan, Qingfeng

AU - Li, Run Wei

PY - 2013/5/7

Y1 - 2013/5/7

N2 - In this paper, we investigated the influence of strain on anisotropic magnetoresistance (AMR) in La0.67Ca0.33MnO3 (LCMO) films epitaxially grown on BaTiO3(001). For 250-nm-thick LCMO film, the AMR shows a peak near the metal-insulator transition (MIT) temperature, which is similar to that in bulk LCMO. When the thickness of LCMO is decreased to 150 nm, the AMR value achieves a maximum at low temperature. For 80-nm-thick LCMO film, in addition to the appearance of the maximum AMR at low temperature, the symmetry and sign of AMR are also changed, associated with interface strain in the different phases of BaTiO3. In comparison, the AMR for the reference LCMO films grown on SrTiO3(001) shows a maximum value near the MIT temperature regardless of the thickness of film. Our experiment results suggest that not only the strain value but also the distortion type can considerably tune the AMR of LCMO films.

AB - In this paper, we investigated the influence of strain on anisotropic magnetoresistance (AMR) in La0.67Ca0.33MnO3 (LCMO) films epitaxially grown on BaTiO3(001). For 250-nm-thick LCMO film, the AMR shows a peak near the metal-insulator transition (MIT) temperature, which is similar to that in bulk LCMO. When the thickness of LCMO is decreased to 150 nm, the AMR value achieves a maximum at low temperature. For 80-nm-thick LCMO film, in addition to the appearance of the maximum AMR at low temperature, the symmetry and sign of AMR are also changed, associated with interface strain in the different phases of BaTiO3. In comparison, the AMR for the reference LCMO films grown on SrTiO3(001) shows a maximum value near the MIT temperature regardless of the thickness of film. Our experiment results suggest that not only the strain value but also the distortion type can considerably tune the AMR of LCMO films.

UR - https://www.scopus.com/pages/publications/84877776225

U2 - 10.1063/1.4795841

DO - 10.1063/1.4795841

M3 - 文章

AN - SCOPUS:84877776225

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

M1 - 17C716

ER -

Strain induced tunable anisotropic magnetoresistance in La _0.67Ca_0.33MnO₃/BaTiO₃ heterostructures

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