TY - JOUR
T1 - Strain induced quantum effect in semiconductors
AU - Wang, Zhentang
AU - Chen, Shiyou
AU - Duan, Xiangmei
AU - Sun, Deyan
AU - Gong, Xingao
PY - 2012/7
Y1 - 2012/7
N2 - The strain effect in semiconductor was quite often described by the continuum elastic model, whose validity is still under debate. Based on the quantum mechanical analysis, we show that if the strain changes the electron occupation of the energy levels, the continuum elastic model would fail. Our finding is demonstrated by the first-principles calculation of Mn-doped GaAs. We also predict that, for Mn-doped spintronic materials, the hole density, thus the Curie temperature TC, can be increased by compressive strain.
AB - The strain effect in semiconductor was quite often described by the continuum elastic model, whose validity is still under debate. Based on the quantum mechanical analysis, we show that if the strain changes the electron occupation of the energy levels, the continuum elastic model would fail. Our finding is demonstrated by the first-principles calculation of Mn-doped GaAs. We also predict that, for Mn-doped spintronic materials, the hole density, thus the Curie temperature TC, can be increased by compressive strain.
KW - Dopants in semiconductor
KW - First-principles calculations
KW - Strain effect
UR - https://www.scopus.com/pages/publications/84863558933
U2 - 10.1143/JPSJ.81.074712
DO - 10.1143/JPSJ.81.074712
M3 - 文章
AN - SCOPUS:84863558933
SN - 0031-9015
VL - 81
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 7
M1 - 074712
ER -