Strain-Induced Ferroelectric Phase Transition in Group-V Monolayer Black Phosphorus

  • Wen Xu
  • , Jun Ding Zheng
  • , Wen Yi Tong*
  • , Jiu Long Wang
  • , Ya Ping Shao
  • , Yu Ke Zhang
  • , Yi Fan Tan
  • , Chun Gang Duan*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Recently, a variety of elemental ferroelectric materials have been predicted in group-V monolayers. However, black phosphorus, as a well-known group-V system with the similar structure, seems to be absent of spontaneous ferroelectric polarization. Based on first-principles calculations, ferroelectric phase in monolayer black phosphorus (BP) is successfully obtained by strain engineering and the driving force can be attributed to Jahn–Teller effect. In addition, the bandgap of the monolayer BP is found to be tunable with applied strain, which can be adjusted to even achieve the metal polarization states. The work not only provides a new route to explore elemental ferroelectricity in 2D materials, but also suggests strain engineering as a powerful tool in related research.

Original languageEnglish
Article number2200169
JournalAdvanced Quantum Technologies
Volume6
Issue number4
DOIs
StatePublished - Apr 2023

Keywords

  • Jahn–Teller effect
  • black phosphorene
  • elemental ferroelectricity
  • group-V monolayer

Fingerprint

Dive into the research topics of 'Strain-Induced Ferroelectric Phase Transition in Group-V Monolayer Black Phosphorus'. Together they form a unique fingerprint.

Cite this