Strain-induced bandgap engineering in C₃N nanotubes

Theoretical calculations have been used to investigate the electronic properties of C₃N nanotubes (C₃NNTs) and their tuning by applying strain. The C₃NNTs are semiconductors and the application of strain can greatly adjust their bandgaps and carrier mobilities. Compressive strain along the axial direction enlarges the bandgap while the tensile strain reduces the bandgap of the nanotubes. Different carrier mobilities of armchair, zigzag and chiral C₃NNTs under external strain have been revealed. Therefore, external strain is expected to be a powerful tool to modulate the electronic properties of C₃NNTs, making C₃NNTs to have promising applications in nanoscale sensors and electronic devices.