@inproceedings{4fe0ec07dbb34cb18a8aa65ce6b59950,
title = "Statistical Variability Analysis in Vertically Stacked Gate All Around FETs at 7 nm Technology",
abstract = " In this paper, the statistical variability in the promoting gate all around field effect transistor (GAAFET) at 7 nm node is performed by 3D TCAD simulation. The effects of random variation sources, such as interface traps fluctuation (ITF), random dopants fluctuation (RDF), work function variation (WFV), and oxide thickness variation (TOXV), are analyzed through 500 investigated samples. A distinct variation dependence is found in fluctuation of DC characteristics. RDF is shown to have great influence on the drive current I ON , while ITF, TOXV, and WFV are significant to fluctuate V TH and SS in the subthreshold region. Besides, the sensitive of trap is detected for the optimization of ITF, and the interaction between ITF and TOXV strengthens the variation of subthreshold parameters.",
author = "Yue Zhuo and Li, \{Xiang Long\} and Sun, \{Ya Bin\} and Li, \{Xiao Jin\} and Shi, \{Yan Ling\} and Chen, \{Shou Mian\} and Hu, \{Shao Jian\} and Ao Guo",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",
year = "2018",
month = dec,
day = "5",
doi = "10.1109/ICSICT.2018.8565797",
language = "英语",
series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",
booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
address = "美国",
}