Stability of Sb2Te crystalline films for phase change memory

  • Guang Yu Liu
  • , Liang Cai Wu
  • , Zhi Tang Song
  • , Feng Rao
  • , San Nian Song
  • , Yan Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Stability is one of the most important criterions to judge the quality of products, especially for the phase-change memory (PCM), which is regarded as the most promising candidate for next-generation non-volatile memory. Due to the lack of resistance stability, read errors can occur easily and the reliability of PCM will be influenced. Using Sb2Te as a base material, the resistance stability of Sb2Te was studied, and the results indicated that in the whole cooling process, the resistance of Sb2Te crystalline film was extremely steady under different annealing temperatures and different cooling rates. To unravel the reason why the resistance of Sb2Te crystalline film has good stability, further study was carried out and the results showed that there was no new diffraction peak in the XRD pattern, and the HRTEM images showed the similar hexagonal phase for the films under different annealing temperatures. Moreover, it was observed that the resistance in Sb2Te-based PCM device was still stable for crystalline state and amorphous state. These results revealed that the stability of Sb2Te crystalline films at a micro level and the stability of microscopic structure resulted in the stability of resistance. Therefore, based on the present study, the stability of phase-change material Sb2Te can be applied to exploit more reliable PCM for near-future application.

Original languageEnglish
Title of host publicationIUMRS International Conference in Asia - IUMRS-ICA 2016
EditorsYafang Han, Baiqing Xiong, Jun Zhang, Xuefeng Liu, Xuefeng Liu, Jijun Zhao, Runhua Fan, Zuoren Nie, Meifang Zhu
PublisherTrans Tech Publications Ltd
Pages1829-1833
Number of pages5
ISBN (Print)9783035711516
DOIs
StatePublished - 2017
Externally publishedYes
Event17th IUMRS International Conference in Asia, IUMRS-ICA 2016 - Qingdao, China
Duration: 20 Oct 201624 Oct 2016

Publication series

NameMaterials Science Forum
Volume898 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference17th IUMRS International Conference in Asia, IUMRS-ICA 2016
Country/TerritoryChina
CityQingdao
Period20/10/1624/10/16

Keywords

  • Crystalline
  • Phase change memory (PCM)
  • Phase-change material
  • SbTe
  • Stability
  • Structure

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