Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Zongzhi Zhang; Yisong Zhang; Yaowen Liu; B. Ma; Q. Y. Jin

doi:10.1063/1.2713143

Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Zongzhi Zhang^*
, Yisong Zhang
, Yaowen Liu
, B. Ma
, Q. Y. Jin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Spin-transfer-induced magnetization switching processes are evidenced by the "snapshots" of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.

Original language	English
Article number	112504
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2713143
State	Published - 2007
Externally published	Yes

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10.1063/1.2713143

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title = "Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels",

abstract = "Spin-transfer-induced magnetization switching processes are evidenced by the {"}snapshots{"} of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.",

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year = "2007",

doi = "10.1063/1.2713143",

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volume = "90",

journal = "Applied Physics Letters",

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T1 - Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

AU - Zhang, Zongzhi

AU - Zhang, Yisong

AU - Liu, Yaowen

AU - Ma, B.

AU - Jin, Q. Y.

PY - 2007

Y1 - 2007

N2 - Spin-transfer-induced magnetization switching processes are evidenced by the "snapshots" of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.

AB - Spin-transfer-induced magnetization switching processes are evidenced by the "snapshots" of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.

UR - https://www.scopus.com/pages/publications/33947322998

U2 - 10.1063/1.2713143

DO - 10.1063/1.2713143

M3 - 文章

AN - SCOPUS:33947322998

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112504

ER -

Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Abstract

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