Spin susceptibility of two-dimensional electron system in HgTe surface quantum well

Yonggang Xu; Meng Lv; Reng Wang; Yuanming Zhou; Tie Lin; Zhigang Chang; Guolin Yu; Ning Dai; Junhao Chu

doi:10.1063/1.4891646

Spin susceptibility of two-dimensional electron system in HgTe surface quantum well

Yonggang Xu, Meng Lv, Reng Wang, Yuanming Zhou, Tie Lin, Zhigang Chang, Guolin Yu, Ning Dai, Junhao Chu

Research output: Contribution to journal › Article › peer-review

Abstract

HgTe films were grown by vapor phase epitaxy on CdZnTe substrate and passivated by anodic oxidation to form surface quantum wells, in which the two-dimensional electron systems were studied by magnetotransport experiments. In tilted magnetic fields, coincidence method was used to extract the electron spin susceptibility |mr*g*|, which is found to be very large and show no significant dependence on the filling factor ν. These results deviate from former experiments and are related to the specific band structure of our samples.

Original language	English
Article number	062404
Journal	Applied Physics Letters
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.4891646
State	Published - 11 Aug 2014
Externally published	Yes

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title = "Spin susceptibility of two-dimensional electron system in HgTe surface quantum well",

abstract = "HgTe films were grown by vapor phase epitaxy on CdZnTe substrate and passivated by anodic oxidation to form surface quantum wells, in which the two-dimensional electron systems were studied by magnetotransport experiments. In tilted magnetic fields, coincidence method was used to extract the electron spin susceptibility |mr*g*|, which is found to be very large and show no significant dependence on the filling factor ν. These results deviate from former experiments and are related to the specific band structure of our samples.",

author = "Yonggang Xu and Meng Lv and Reng Wang and Yuanming Zhou and Tie Lin and Zhigang Chang and Guolin Yu and Ning Dai and Junhao Chu",

year = "2014",

month = aug,

day = "11",

doi = "10.1063/1.4891646",

language = "英语",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Spin susceptibility of two-dimensional electron system in HgTe surface quantum well

AU - Xu, Yonggang

AU - Lv, Meng

AU - Wang, Reng

AU - Zhou, Yuanming

AU - Lin, Tie

AU - Chang, Zhigang

AU - Yu, Guolin

AU - Dai, Ning

AU - Chu, Junhao

PY - 2014/8/11

Y1 - 2014/8/11

N2 - HgTe films were grown by vapor phase epitaxy on CdZnTe substrate and passivated by anodic oxidation to form surface quantum wells, in which the two-dimensional electron systems were studied by magnetotransport experiments. In tilted magnetic fields, coincidence method was used to extract the electron spin susceptibility |mr*g*|, which is found to be very large and show no significant dependence on the filling factor ν. These results deviate from former experiments and are related to the specific band structure of our samples.

AB - HgTe films were grown by vapor phase epitaxy on CdZnTe substrate and passivated by anodic oxidation to form surface quantum wells, in which the two-dimensional electron systems were studied by magnetotransport experiments. In tilted magnetic fields, coincidence method was used to extract the electron spin susceptibility |mr*g*|, which is found to be very large and show no significant dependence on the filling factor ν. These results deviate from former experiments and are related to the specific band structure of our samples.

UR - https://www.scopus.com/pages/publications/84940262942

U2 - 10.1063/1.4891646

DO - 10.1063/1.4891646

M3 - 文章

AN - SCOPUS:84940262942

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062404

ER -

Spin susceptibility of two-dimensional electron system in HgTe surface quantum well

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