Spin-related magnetoresistance oscillations in the inversion layer on bulk p-Hg_1-xCd_xTe

We have investigated spin-related oscillatory magnetoresistances of the two-dimensional electron gas in the inversion layer on bulk p-Hg _1-xCd_xTe at low temperatures. The oscillatory magnetoresistances are found to display beating pattern at low magnetic fields and to exhibit spin-splitting structure at high magnetic fields. We attribute the beating pattern to zero-field spin splitting due to spin-orbit coupling by analyzing fast-Fourier-transform results and Hall resistance. By modulating the oscillatory magnetoresistances we investigate the influence of spin-orbit coupling, Zeeman splitting, and the second populated subband on the appearance of beating patterns and the spin-splitting structure in oscillatory magnetoresistances. The strong spin-orbit coupling and the large effective g factor are demonstrated to be the significant parameters in controlling the appearance of spin-related oscillatory magnetoresistance in the inversion layer on bulk p-Hg_1-xCd_xTe. A good agreement between magnetoresistance data and theory suggests a spin-orbit coupling parameter 2.8 10^-11eVm and the effective g factor g -44.0. The spin-orbit coupling effect presented in the inversion layer on bulk p-Hg_1-xCd _xTe provides a potential candidate for spintronic devices.