Abstract
The low field magnetization-step effect was observed in the spin-glass (SG) regime of p-type Hg0.8Mn0.2 single crystal when the temperature was less than about 3 K. The main features of this effect were (i) the magnetic susceptibility suddenly reduced to almost zero as the magnetic field decreased below a critical value; (ii) the critical magnetic field correlated reversely to temperature. In addition, X-ray diffraction, Raman scattering, and temperature-dependent Hall measurements manifested this effect was the intrinsic nature of the Hg1-xMNx single crystal. Qualitative theoretical analysis suggests that the possible mechanism of low field magnetization-step effect is the combined effect of SG transition and (long-range) antiferromagnetic interactions among Mn2+ ions in randomly frustrated spins system.
| Original language | English |
|---|---|
| Pages (from-to) | 2015-2019 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 253 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1 Oct 2016 |
Keywords
- HgMnTe
- Magnetic semiconductors
- antiferromagnetism
- magnetic susceptibility
- spin glass