Spin-glass state induced low field magnetization-step effect in a Hg1−xMnxTe single crystal

  • Liangqing Zhu*
  • , Jun Shao
  • , Liang Zhu
  • , Xiren Chen
  • , Tie Lin
  • , Yuanyuan Zhang
  • , Yanqiu Li
  • , Zhen Qi
  • , Wei Bai
  • , Xiaodong Tang
  • , Junhao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The low field magnetization-step effect was observed in the spin-glass (SG) regime of p-type Hg0.8Mn0.2 single crystal when the temperature was less than about 3 K. The main features of this effect were (i) the magnetic susceptibility suddenly reduced to almost zero as the magnetic field decreased below a critical value; (ii) the critical magnetic field correlated reversely to temperature. In addition, X-ray diffraction, Raman scattering, and temperature-dependent Hall measurements manifested this effect was the intrinsic nature of the Hg1-xMNx single crystal. Qualitative theoretical analysis suggests that the possible mechanism of low field magnetization-step effect is the combined effect of SG transition and (long-range) antiferromagnetic interactions among Mn2+ ions in randomly frustrated spins system.

Original languageEnglish
Pages (from-to)2015-2019
Number of pages5
JournalPhysica Status Solidi (B): Basic Research
Volume253
Issue number10
DOIs
StatePublished - 1 Oct 2016

Keywords

  • HgMnTe
  • Magnetic semiconductors
  • antiferromagnetism
  • magnetic susceptibility
  • spin glass

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