Spectroscopic and electrical investigation of Fe doped Hg1-xCdxTe

Yong Chang; Junhao Chu; Wenguo Tang; Wenzhong Shen; Dingyuan Tang; Runqing Ye

Spectroscopic and electrical investigation of Fe doped Hg_1-xCd_xTe

Yong Chang^*
, Junhao Chu
, Wenguo Tang
, Wenzhong Shen
, Dingyuan Tang
, Runqing Ye

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The investigation on Fe doped Hg_1-xCd_xTe samples has been performed by infrared transmission spectroscopy, photoluminescence spectroscopy and Hall measurements. The Fe impurity behavior doped in Hg_1-xCd_xTe has been studied, a donor level which is about 80meV below the bottom of the conduction band was discovered. Exhibiting no electrical activity, the Fe doped in Hg_1-xCd_xTe can influence the non-equilibrium carrier lifetime by acting as the non-radiative combination center, which can be discovered through the temperature dependence of integrated photoluminescence intensity.

Original language	English
Pages (from-to)	258-263
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	18
Issue number	4
State	Published - Apr 1997
Externally published	Yes

Cite this

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title = "Spectroscopic and electrical investigation of Fe doped Hg1-xCdxTe",

abstract = "The investigation on Fe doped Hg1-xCdxTe samples has been performed by infrared transmission spectroscopy, photoluminescence spectroscopy and Hall measurements. The Fe impurity behavior doped in Hg1-xCdxTe has been studied, a donor level which is about 80meV below the bottom of the conduction band was discovered. Exhibiting no electrical activity, the Fe doped in Hg1-xCdxTe can influence the non-equilibrium carrier lifetime by acting as the non-radiative combination center, which can be discovered through the temperature dependence of integrated photoluminescence intensity.",

author = "Yong Chang and Junhao Chu and Wenguo Tang and Wenzhong Shen and Dingyuan Tang and Runqing Ye",

year = "1997",

month = apr,

language = "英语",

volume = "18",

pages = "258--263",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

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TY - JOUR

T1 - Spectroscopic and electrical investigation of Fe doped Hg1-xCdxTe

AU - Chang, Yong

AU - Chu, Junhao

AU - Tang, Wenguo

AU - Shen, Wenzhong

AU - Tang, Dingyuan

AU - Ye, Runqing

PY - 1997/4

Y1 - 1997/4

N2 - The investigation on Fe doped Hg1-xCdxTe samples has been performed by infrared transmission spectroscopy, photoluminescence spectroscopy and Hall measurements. The Fe impurity behavior doped in Hg1-xCdxTe has been studied, a donor level which is about 80meV below the bottom of the conduction band was discovered. Exhibiting no electrical activity, the Fe doped in Hg1-xCdxTe can influence the non-equilibrium carrier lifetime by acting as the non-radiative combination center, which can be discovered through the temperature dependence of integrated photoluminescence intensity.

AB - The investigation on Fe doped Hg1-xCdxTe samples has been performed by infrared transmission spectroscopy, photoluminescence spectroscopy and Hall measurements. The Fe impurity behavior doped in Hg1-xCdxTe has been studied, a donor level which is about 80meV below the bottom of the conduction band was discovered. Exhibiting no electrical activity, the Fe doped in Hg1-xCdxTe can influence the non-equilibrium carrier lifetime by acting as the non-radiative combination center, which can be discovered through the temperature dependence of integrated photoluminescence intensity.

UR - https://www.scopus.com/pages/publications/0031122844

M3 - 文章

AN - SCOPUS:0031122844

SN - 0253-4177

VL - 18

SP - 258

EP - 263

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 4

ER -

Spectroscopic and electrical investigation of Fe doped Hg_1-xCd_xTe

Abstract

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