Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films

Biao Li; Yan Wu; Yongsheng Gui; Hongjuan Ye; Yong Chang; Li He; Junhao Chu

doi:10.1063/1.122377

Spectra analysis of annealed Hg_1-xCd_xTe molecular beam epitaxial films

Biao Li^*
, Yan Wu
, Yongsheng Gui
, Hongjuan Ye
, Yong Chang
, Li He
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This letter discusses the analysis of infrared and visible spectra of Hg_1-xCd_xTe thin films deposited by molecular beam epitaxy (MBE) onto a CdTe buffer layer on a GaAs substrate. The spectra were obtained by infrared transmission and spectroscopic ellipsometry. Two mathematical techniques, fast Fourier transform (FFT) of the multiple reflectance spectrum associated with a multilayer system and fractional-derivatives spectra (FDS) were employed. Compared to the conventional fitting procedure, the FFT method directly offers the thickness of individual layers. It can also provide insight into the interfaces. The FDS method, however, gives information of composition and lattice perfection, which is useful in in situ real-time monitoring during the MBE run. The results show that annealing increases the compositional grading of Hg_1-x Cd_xTe MBE films. Furthermore, the crystal microstructure deteriorates due to the irregular arrangement of diffusing atoms in the lattice sites.

Original language	English
Pages (from-to)	1376-1378
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	10
DOIs	https://doi.org/10.1063/1.122377
State	Published - 1998
Externally published	Yes

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title = "Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films",

abstract = "This letter discusses the analysis of infrared and visible spectra of Hg1-xCdxTe thin films deposited by molecular beam epitaxy (MBE) onto a CdTe buffer layer on a GaAs substrate. The spectra were obtained by infrared transmission and spectroscopic ellipsometry. Two mathematical techniques, fast Fourier transform (FFT) of the multiple reflectance spectrum associated with a multilayer system and fractional-derivatives spectra (FDS) were employed. Compared to the conventional fitting procedure, the FFT method directly offers the thickness of individual layers. It can also provide insight into the interfaces. The FDS method, however, gives information of composition and lattice perfection, which is useful in in situ real-time monitoring during the MBE run. The results show that annealing increases the compositional grading of Hg1-x CdxTe MBE films. Furthermore, the crystal microstructure deteriorates due to the irregular arrangement of diffusing atoms in the lattice sites.",

author = "Biao Li and Yan Wu and Yongsheng Gui and Hongjuan Ye and Yong Chang and Li He and Junhao Chu",

year = "1998",

doi = "10.1063/1.122377",

language = "英语",

volume = "73",

pages = "1376--1378",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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}

TY - JOUR

T1 - Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films

AU - Li, Biao

AU - Wu, Yan

AU - Gui, Yongsheng

AU - Ye, Hongjuan

AU - Chang, Yong

AU - He, Li

AU - Chu, Junhao

PY - 1998

Y1 - 1998

N2 - This letter discusses the analysis of infrared and visible spectra of Hg1-xCdxTe thin films deposited by molecular beam epitaxy (MBE) onto a CdTe buffer layer on a GaAs substrate. The spectra were obtained by infrared transmission and spectroscopic ellipsometry. Two mathematical techniques, fast Fourier transform (FFT) of the multiple reflectance spectrum associated with a multilayer system and fractional-derivatives spectra (FDS) were employed. Compared to the conventional fitting procedure, the FFT method directly offers the thickness of individual layers. It can also provide insight into the interfaces. The FDS method, however, gives information of composition and lattice perfection, which is useful in in situ real-time monitoring during the MBE run. The results show that annealing increases the compositional grading of Hg1-x CdxTe MBE films. Furthermore, the crystal microstructure deteriorates due to the irregular arrangement of diffusing atoms in the lattice sites.

AB - This letter discusses the analysis of infrared and visible spectra of Hg1-xCdxTe thin films deposited by molecular beam epitaxy (MBE) onto a CdTe buffer layer on a GaAs substrate. The spectra were obtained by infrared transmission and spectroscopic ellipsometry. Two mathematical techniques, fast Fourier transform (FFT) of the multiple reflectance spectrum associated with a multilayer system and fractional-derivatives spectra (FDS) were employed. Compared to the conventional fitting procedure, the FFT method directly offers the thickness of individual layers. It can also provide insight into the interfaces. The FDS method, however, gives information of composition and lattice perfection, which is useful in in situ real-time monitoring during the MBE run. The results show that annealing increases the compositional grading of Hg1-x CdxTe MBE films. Furthermore, the crystal microstructure deteriorates due to the irregular arrangement of diffusing atoms in the lattice sites.

UR - https://www.scopus.com/pages/publications/15844362680

U2 - 10.1063/1.122377

DO - 10.1063/1.122377

M3 - 文章

AN - SCOPUS:15844362680

SN - 0003-6951

VL - 73

SP - 1376

EP - 1378

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Spectra analysis of annealed Hg_1-xCd_xTe molecular beam epitaxial films

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