Solution-processed Sr-doped NiOx as hole transport layer for efficient and stable perovskite solar cells

Jiankai Zhang, Wujian Mao, Xian Hou, Jiaji Duan, Jianping Zhou, Sumei Huang, Wei Ou-Yang, Xuehua Zhang, Zhuo Sun, Xiaohong Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

Nickel oxide (NiOx) hole transport layer (HTL)-based planar perovskite solar cells (PSCs) have attracted much attention due to high power conversion efficiency (PCE) and simple processing. In this work, smooth and compact Sr-doped NiOx films with different Sr doping concentration were successfully prepared through a simple low temperature sol-gel method. The 1 at.% Sr-doped NiOx HTL-based PSCs exhibited the best performance with PCE of 20.07%, which is greatly higher than PCE of reference NiOx based PSCs (15.73%). Furthermore, the unencapsulated PSCs based on Sr:NiOx HTL still retains over 60% of the original PCE value aging for 100 days under ambient air, showing better stability. The superior performance of Sr-doped NiOx based PSCs is attributed to better electrical conductivity, crystallinity of perovskite film and energy level matching with perovskite layer, which can greatly improve hole transport and extraction abilities and reduce carrier recombination, resulting in high PCE and better stability.

Original languageEnglish
Pages (from-to)1133-1141
Number of pages9
JournalSolar Energy
Volume174
DOIs
StatePublished - 1 Nov 2018
Externally publishedYes

Keywords

  • Efficiency
  • Low temperature
  • NiO
  • Perovskite solar cells
  • Sr
  • Stability

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