Single-photon detector at 1550nm with gate-mode quenched InGaAs/InP avalanche photodiode

Guang Wu; Chunyuan Zhou; Xiuliang Chen; Xianghe Li; Heping Zeng

doi:10.1117/12.520253

Single-photon detector at 1550nm with gate-mode quenched InGaAs/InP avalanche photodiode

Guang Wu
, Chunyuan Zhou
, Xiuliang Chen
, Xianghe Li
, Heping Zeng

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability P_d about 1.3 × 10^-5 and 1.6 × 10^-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of P_d/η as 1.7 × 10^-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained P_d/η as 8.9 × 10^-4 per pulse.

Original language	English
Pages (from-to)	812-818
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5280 II
DOIs	https://doi.org/10.1117/12.520253
State	Published - 2003
Event	APOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier - Wuhan, China Duration: 4 Nov 2003 → 6 Nov 2003

Keywords

Gate-mode photon detector
Quantum key distribution

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10.1117/12.520253

Cite this

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title = "Single-photon detector at 1550nm with gate-mode quenched InGaAs/InP avalanche photodiode",

abstract = "In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10\% and 20\% at the dark probability Pd about 1.3 × 10-5 and 1.6 × 10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7 × 10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9 × 10-4 per pulse.",

keywords = "Gate-mode photon detector, Quantum key distribution",

author = "Guang Wu and Chunyuan Zhou and Xiuliang Chen and Xianghe Li and Heping Zeng",

year = "2003",

doi = "10.1117/12.520253",

language = "英语",

volume = "5280 II",

pages = "812--818",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "APOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier ; Conference date: 04-11-2003 Through 06-11-2003",

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TY - JOUR

T1 - Single-photon detector at 1550nm with gate-mode quenched InGaAs/InP avalanche photodiode

AU - Wu, Guang

AU - Zhou, Chunyuan

AU - Chen, Xiuliang

AU - Li, Xianghe

AU - Zeng, Heping

PY - 2003

Y1 - 2003

N2 - In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3 × 10-5 and 1.6 × 10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7 × 10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9 × 10-4 per pulse.

AB - In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3 × 10-5 and 1.6 × 10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7 × 10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9 × 10-4 per pulse.

KW - Gate-mode photon detector

KW - Quantum key distribution

UR - https://www.scopus.com/pages/publications/2942677242

U2 - 10.1117/12.520253

DO - 10.1117/12.520253

M3 - 会议文章

AN - SCOPUS:2942677242

SN - 0277-786X

VL - 5280 II

SP - 812

EP - 818

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - APOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier

Y2 - 4 November 2003 through 6 November 2003

ER -

Single-photon detector at 1550nm with gate-mode quenched InGaAs/InP avalanche photodiode

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Keywords

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