Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi 3.25La0.75Ti3O12 ferroelectric films

N. Zhong; S. Okamura; K. Uchiyama; T. Shiosaki

doi:10.1063/1.2147710

Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi _3.25La_0.75Ti₃O₁₂ ferroelectric films

N. Zhong, S. Okamura, K. Uchiyama, T. Shiosaki

Nara Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The dielectric and conductive properties of Bi3.25 La0.75 Ti O3 ferroelectric films were investigated in the temperature range of 25 °C-600 °C. A dielectric peak with a relaxation-type characteristic was observed around 400 °C. This peak can be greatly suppressed or eliminated by high sintering temperature or annealing in an oxygen atmosphere (O2), and induced again by annealing in a reducing atmosphere (N2). The activation energy of dielectric relaxation and the characteristic relaxation time are estimated to be 1.89 eV and 1.08× 10-14 s, respectively. In the corresponding temperature region, activation energy of conductivity is 0.65 eV. The mechanism of this dielectric anomaly is discussed.

Original language	English
Article number	252901
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2147710
State	Published - 2005
Externally published	Yes

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title = "Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi 3.25La0.75Ti3O12 ferroelectric films",

abstract = "The dielectric and conductive properties of Bi3.25 La0.75 Ti O3 ferroelectric films were investigated in the temperature range of 25 °C-600 °C. A dielectric peak with a relaxation-type characteristic was observed around 400 °C. This peak can be greatly suppressed or eliminated by high sintering temperature or annealing in an oxygen atmosphere (O2), and induced again by annealing in a reducing atmosphere (N2). The activation energy of dielectric relaxation and the characteristic relaxation time are estimated to be 1.89 eV and 1.08× 10-14 s, respectively. In the corresponding temperature region, activation energy of conductivity is 0.65 eV. The mechanism of this dielectric anomaly is discussed.",

author = "N. Zhong and S. Okamura and K. Uchiyama and T. Shiosaki",

year = "2005",

doi = "10.1063/1.2147710",

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AU - Zhong, N.

AU - Okamura, S.

AU - Uchiyama, K.

AU - Shiosaki, T.

PY - 2005

Y1 - 2005

N2 - The dielectric and conductive properties of Bi3.25 La0.75 Ti O3 ferroelectric films were investigated in the temperature range of 25 °C-600 °C. A dielectric peak with a relaxation-type characteristic was observed around 400 °C. This peak can be greatly suppressed or eliminated by high sintering temperature or annealing in an oxygen atmosphere (O2), and induced again by annealing in a reducing atmosphere (N2). The activation energy of dielectric relaxation and the characteristic relaxation time are estimated to be 1.89 eV and 1.08× 10-14 s, respectively. In the corresponding temperature region, activation energy of conductivity is 0.65 eV. The mechanism of this dielectric anomaly is discussed.

AB - The dielectric and conductive properties of Bi3.25 La0.75 Ti O3 ferroelectric films were investigated in the temperature range of 25 °C-600 °C. A dielectric peak with a relaxation-type characteristic was observed around 400 °C. This peak can be greatly suppressed or eliminated by high sintering temperature or annealing in an oxygen atmosphere (O2), and induced again by annealing in a reducing atmosphere (N2). The activation energy of dielectric relaxation and the characteristic relaxation time are estimated to be 1.89 eV and 1.08× 10-14 s, respectively. In the corresponding temperature region, activation energy of conductivity is 0.65 eV. The mechanism of this dielectric anomaly is discussed.

UR - https://www.scopus.com/pages/publications/29144480908

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DO - 10.1063/1.2147710

M3 - 文章

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SN - 0003-6951

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JF - Applied Physics Letters

IS - 25

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ER -

Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi _3.25La_0.75Ti₃O₁₂ ferroelectric films

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