Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy

Changhong Sun; Shuhong Hu; Qiwei Wang; Feng Qiu; Yingfei Lv; Huiyong Deng; Yan Sun; Ning Dai

doi:10.1117/12.975813

Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy

Changhong Sun
, Shuhong Hu
, Qiwei Wang
, Feng Qiu
, Yingfei Lv
, Huiyong Deng
, Yan Sun
, Ning Dai^*

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Single crystalline InAs_0.016Sb_0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.

Original language	English
Title of host publication	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
Subtitle of host publication	Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
DOIs	https://doi.org/10.1117/12.975813
State	Published - 2012
Externally published	Yes
Event	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy - Xiamen, China Duration: 26 Apr 2012 → 29 Apr 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8419
ISSN (Print)	0277-786X

Conference

Conference	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Country/Territory	China
City	Xiamen
Period	26/04/12 → 29/04/12

Keywords

InAsSb
Liquid phase epitaxy
Single crystal

Access to Document

10.1117/12.975813

Cite this

Sun, C., Hu, S., Wang, Q., Qiu, F., Lv, Y., Deng, H., Sun, Y., & Dai, N. (2012). Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy Article 84191E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8419). https://doi.org/10.1117/12.975813

Sun, Changhong ; Hu, Shuhong ; Wang, Qiwei et al. / Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy. 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{22ea13afcd9b4cc7b9eb7dbc863c1fb2,

title = "Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy",

abstract = "Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.",

keywords = "InAsSb, Liquid phase epitaxy, Single crystal",

author = "Changhong Sun and Shuhong Hu and Qiwei Wang and Feng Qiu and Yingfei Lv and Huiyong Deng and Yan Sun and Ning Dai",

year = "2012",

doi = "10.1117/12.975813",

language = "英语",

isbn = "9780819491015",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies",

note = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy ; Conference date: 26-04-2012 Through 29-04-2012",

}

Sun, C, Hu, S, Wang, Q, Qiu, F, Lv, Y, Deng, H, Sun, Y & Dai, N 2012, Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy. in 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy., 84191E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, Xiamen, China, 26/04/12. https://doi.org/10.1117/12.975813

Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy. / Sun, Changhong; Hu, Shuhong; Wang, Qiwei et al.
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. 2012. 84191E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8419).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy

AU - Sun, Changhong

AU - Hu, Shuhong

AU - Wang, Qiwei

AU - Qiu, Feng

AU - Lv, Yingfei

AU - Deng, Huiyong

AU - Sun, Yan

AU - Dai, Ning

PY - 2012

Y1 - 2012

N2 - Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.

AB - Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.

KW - InAsSb

KW - Liquid phase epitaxy

KW - Single crystal

UR - https://www.scopus.com/pages/publications/84875551776

U2 - 10.1117/12.975813

DO - 10.1117/12.975813

M3 - 会议稿件

AN - SCOPUS:84875551776

SN - 9780819491015

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies

T2 - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy

Y2 - 26 April 2012 through 29 April 2012

ER -

Sun C, Hu S, Wang Q, Qiu F, Lv Y, Deng H et al. Single crystalline InAs_xSb_1-x grown on (100) InSb substrate by liquid phase epitaxy. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. 2012. 84191E. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.975813