Simulation of MoS2 stacked nanosheet field effect transistor

Yang Shen; He Tian; Tianling Ren

doi:10.1088/1674-4926/43/8/082002

Simulation of MoS₂ stacked nanosheet field effect transistor

Yang Shen
, He Tian^*
, Tianling Ren^*

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS₂ are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS₂. In addition, small-signal capacitance is extracted and analyzed. The MoS₂ based NSFET shows great potential to enable next generation electronics.

Original language	English
Article number	082002
Journal	Journal of Semiconductors
Volume	43
Issue number	8
DOIs	https://doi.org/10.1088/1674-4926/43/8/082002
State	Published - Aug 2022
Externally published	Yes

Keywords

MoS
TCAD simulation
stacked nanosheet GAA

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10.1088/1674-4926/43/8/082002

Cite this

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title = "Simulation of MoS2 stacked nanosheet field effect transistor",

abstract = "Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS2. In addition, small-signal capacitance is extracted and analyzed. The MoS2 based NSFET shows great potential to enable next generation electronics.",

keywords = "MoS, TCAD simulation, stacked nanosheet GAA",

author = "Yang Shen and He Tian and Tianling Ren",

note = "Publisher Copyright: {\textcopyright} 2022 Chinese Institute of Electronics.",

year = "2022",

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doi = "10.1088/1674-4926/43/8/082002",

language = "英语",

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journal = "Journal of Semiconductors",

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T1 - Simulation of MoS2 stacked nanosheet field effect transistor

AU - Shen, Yang

AU - Tian, He

AU - Ren, Tianling

PY - 2022/8

Y1 - 2022/8

N2 - Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS2. In addition, small-signal capacitance is extracted and analyzed. The MoS2 based NSFET shows great potential to enable next generation electronics.

AB - Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS2. In addition, small-signal capacitance is extracted and analyzed. The MoS2 based NSFET shows great potential to enable next generation electronics.

KW - MoS

KW - TCAD simulation

KW - stacked nanosheet GAA

UR - https://www.scopus.com/pages/publications/85138488189

U2 - 10.1088/1674-4926/43/8/082002

DO - 10.1088/1674-4926/43/8/082002

M3 - 文章

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VL - 43

JO - Journal of Semiconductors

JF - Journal of Semiconductors

IS - 8

M1 - 082002

ER -

Simulation of MoS₂ stacked nanosheet field effect transistor

Abstract

Keywords

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