Abstract
An infrared optical system was presented. Two infrared optical beams, one of which is from a tunable Pb1-xSnxTe diode laser, and the other from a pulsed GaAs/GaAlAs diode laser, were focused at the same spot of a sample. The dimension of the infrared spot was measured to be about 250 μm in diameter. The profiles of the stable-state photoconductive response and the minority carrier lifetime of a narrow band Hg1-xCdxTe were studied.
| Original language | English |
|---|---|
| Pages (from-to) | 757-760 |
| Number of pages | 4 |
| Journal | Zhongguo Jiguang/Chinese Journal of Lasers |
| Volume | 22 |
| Issue number | 10 |
| State | Published - Oct 1995 |
| Externally published | Yes |