Simulation measurement of profiles of the stable-state photoconductive response and minority carrier lifetime using two semiconductor lasers

Wenying Mao, Junhao Chu, Yanjin Li, Zimeng Wang, Jiaxiong Fang

Research output: Contribution to journalArticlepeer-review

Abstract

An infrared optical system was presented. Two infrared optical beams, one of which is from a tunable Pb1-xSnxTe diode laser, and the other from a pulsed GaAs/GaAlAs diode laser, were focused at the same spot of a sample. The dimension of the infrared spot was measured to be about 250 μm in diameter. The profiles of the stable-state photoconductive response and the minority carrier lifetime of a narrow band Hg1-xCdxTe were studied.

Original languageEnglish
Pages (from-to)757-760
Number of pages4
JournalZhongguo Jiguang/Chinese Journal of Lasers
Volume22
Issue number10
StatePublished - Oct 1995
Externally publishedYes

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