Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer

Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation. Results of reflection high-energy electron diffraction, atomic force microscopy, cross-section transmission electron microscopy and Rutherford backscattering spectrometry and channelling (RBS/C) show that the epitaxial layer is of a good quality. Furthermore, silicon-on-insulator materials were successfully produced by bond and etch back of porous silicon. The quality of the silicon-on-insulator samples was investigated by RBS/C and spreading resistance profiling. Experimental results show that both the crystalline quality and electrical quality are good. In addition, the interface between the top Si layer and SiO₂ buried layer is very sharp.