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Silicon-nanowire-based CMOS-compatible field-effect transistor nanosensors for ultrasensitive electrical detection of nucleic acids

  • Anran Gao
  • , Na Lu
  • , Pengfei Dai
  • , Tie Li*
  • , Hao Pei
  • , Xiuli Gao
  • , Yibin Gong
  • , Yuelin Wang
  • , Chunhai Fan
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

We herein report the design of a novel semiconducting silicon nanowire field-effect transistor (SiNW-FET) biosensor array for ultrasensitive label-free and real-time detection of nucleic acids. Highly responsive SiNWs with narrow sizes and high surface-to-volume-ratios were "top-down" fabricated with a complementary metal oxide semiconductor compatible anisotropic self-stop etching technique. When SiNWs were covalently modified with DNA probes, the nanosensor showed highly sensitive concentration-dependent conductance change in response to specific target DNA sequences. This SiNW-FET nanosensor revealed ultrahigh sensitivity for rapid and reliable detection of 1 fM of target DNA and high specificity single-nucleotide polymorphism discrimination. As a proof-of-concept for multiplex detection with this small-size and mass producible sensor array, we demonstrated simultaneous selective detection of two pathogenic strain virus DNA sequences (H1N1 and H5N1) of avian influenza.

Original languageEnglish
Pages (from-to)3974-3978
Number of pages5
JournalNano Letters
Volume11
Issue number9
DOIs
StatePublished - 14 Sep 2011
Externally publishedYes

Keywords

  • DNA detection
  • SiNW-FETs
  • biosensor
  • label-free
  • ultrasensitive

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