Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector

Caiyang Wu; Wei Zhou; Niangjuan Yao; Xinyue Xu; Yue Qu; Zhibo Zhang; Jing Wu; Lin Jiang; Zhiming Huang; Junhao Chu

doi:10.7567/1882-0786/ab14fc

Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector

Caiyang Wu
, Wei Zhou
, Niangjuan Yao
, Xinyue Xu
, Yue Qu
, Zhibo Zhang
, Jing Wu
, Lin Jiang
, Zhiming Huang
, Junhao Chu

CAS - Shanghai Institute of Technical Physics
University of Chinese Academy of Sciences
ShanghaiTech University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W^-1 and noise equivalent power (NEP) of 0.38 at 20-40 GHz, and achieved a responsivity of 3.3 kV W^-1 and NEP of 5.7 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.

Original language	English
Article number	052013
Journal	Applied Physics Express
Volume	12
Issue number	5
DOIs	https://doi.org/10.7567/1882-0786/ab14fc
State	Published - 1 May 2019
Externally published	Yes

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title = "Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector",

abstract = "We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.",

author = "Caiyang Wu and Wei Zhou and Niangjuan Yao and Xinyue Xu and Yue Qu and Zhibo Zhang and Jing Wu and Lin Jiang and Zhiming Huang and Junhao Chu",

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doi = "10.7567/1882-0786/ab14fc",

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TY - JOUR

T1 - Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector

AU - Wu, Caiyang

AU - Zhou, Wei

AU - Yao, Niangjuan

AU - Xu, Xinyue

AU - Qu, Yue

AU - Zhang, Zhibo

AU - Wu, Jing

AU - Jiang, Lin

AU - Huang, Zhiming

AU - Chu, Junhao

PY - 2019/5/1

Y1 - 2019/5/1

N2 - We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.

AB - We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 at 0.165-0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.

UR - https://www.scopus.com/pages/publications/85065668036

U2 - 10.7567/1882-0786/ab14fc

DO - 10.7567/1882-0786/ab14fc

M3 - 文章

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SN - 1882-0778

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 052013

ER -

Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector

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