@inproceedings{cf310feca0e64eb1af5051bceeb7dbac,
title = "Short-wavelength infrared defect emission as probe for degradation effects in diode lasers",
abstract = "The infrared emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 7.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm is found to originate from defect states located within the waveguide of the devices. The SWIR intensity is verified to represent a measure of the non-equilibrium carrier concentration in the waveguide, allowing for non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for in situ analysis of the damage patterns. Moreover, spatial resolved SWIR measurements are a promising tool for device inspecting even in low-power operation regimes.",
keywords = "degradation, high-power diode laser, mapping, short-wavelength infrared (SWIR) emission",
author = "Martin Hempel and Tomm, \{Jens W.\} and Fangyu Yue and Mauro Bettiati and Thomas Elsaesser",
note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Novel In-Plane Semiconductor Lasers XIV ; Conference date: 09-02-2015 Through 12-02-2015",
year = "2015",
doi = "10.1117/12.2075859",
language = "英语",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Smowton, \{Peter M.\} and Belyanin, \{Alexey A.\}",
booktitle = "Novel In-Plane Semiconductor Lasers XIV",
address = "美国",
}