Abstract
Uniformly hemispherical separated CuInSe2 (CIS) quantum dots (QDs) were fabricated by low-frequency inductivity coupled plasma (LF-ICP) assisted radio-frequency (RF) magnetron sputtering technique from a ternary compound target on Si (100) and glass substrate with ZnO film serving as buffer layer. The average lateral size and densities of the QDs could be controlled by appropriate deposition parameters. The distribution scope of diameters was from 40 to 120 nm, density was from 4.5E9 to 2.1E11/cm2. Field-emission scanning electron microscope (FE-SEM) and energy-dispersive X-ray (EDX) spectrometer were adopted to measure the properties of CIS QDs.
| Original language | English |
|---|---|
| Pages (from-to) | 225-228 |
| Number of pages | 4 |
| Journal | Surface Review and Letters |
| Volume | 14 |
| Issue number | 2 |
| DOIs | |
| State | Published - Apr 2007 |
Keywords
- CIS
- ICP-assisted magnetron
- Quantum dots