Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering

S. Y. Huang, S. Y. Xu, J. D. Long, Z. Sun, X. Z. Wang, Y. W. Chen, T. Chen, C. Ni, Z. J. Zhang, L. L. Wang, X. D. Li, P. S. Guo, W. X. Que

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Separated AlxIn1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.

Original languageEnglish
Pages (from-to)200-203
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume31
Issue number2
DOIs
StatePublished - Mar 2006

Keywords

  • ICP-assisted magnetron
  • Quantum dots
  • Separated

Fingerprint

Dive into the research topics of 'Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering'. Together they form a unique fingerprint.

Cite this