Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering

S. Y. Huang; S. Y. Xu; J. D. Long; Z. Sun; X. Z. Wang; Y. W. Chen; T. Chen; C. Ni; Z. J. Zhang; L. L. Wang; X. D. Li; P. S. Guo; W. X. Que

doi:10.1016/j.physe.2005.12.156

Separated Al_xIn_1-xN quantum dots grown by plasma-reactive co-sputtering

S. Y. Huang^*
, S. Y. Xu
, J. D. Long
, Z. Sun
, X. Z. Wang
, Y. W. Chen
, T. Chen
, C. Ni
, Z. J. Zhang
, L. L. Wang
, X. D. Li
, P. S. Guo
, W. X. Que

^*Corresponding author for this work

School of Physics

East China Normal University
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Separated Al_xIn_1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of Al_xIn_1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the Al_xIn_1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.

Original language	English
Pages (from-to)	200-203
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	31
Issue number	2
DOIs	https://doi.org/10.1016/j.physe.2005.12.156
State	Published - Mar 2006

Keywords

ICP-assisted magnetron
Quantum dots
Separated

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10.1016/j.physe.2005.12.156

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@article{d1d6dfe498084214a8117880b139e094,

title = "Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering",

abstract = "Separated AlxIn1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.",

keywords = "ICP-assisted magnetron, Quantum dots, Separated",

author = "Huang, \{S. Y.\} and Xu, \{S. Y.\} and Long, \{J. D.\} and Z. Sun and Wang, \{X. Z.\} and Chen, \{Y. W.\} and T. Chen and C. Ni and Zhang, \{Z. J.\} and Wang, \{L. L.\} and Li, \{X. D.\} and Guo, \{P. S.\} and Que, \{W. X.\}",

year = "2006",

month = mar,

doi = "10.1016/j.physe.2005.12.156",

language = "英语",

volume = "31",

pages = "200--203",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering

AU - Huang, S. Y.

AU - Xu, S. Y.

AU - Long, J. D.

AU - Sun, Z.

AU - Wang, X. Z.

AU - Chen, Y. W.

AU - Chen, T.

AU - Ni, C.

AU - Zhang, Z. J.

AU - Wang, L. L.

AU - Li, X. D.

AU - Guo, P. S.

AU - Que, W. X.

PY - 2006/3

Y1 - 2006/3

N2 - Separated AlxIn1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.

AB - Separated AlxIn1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.

KW - ICP-assisted magnetron

KW - Quantum dots

KW - Separated

UR - https://www.scopus.com/pages/publications/33644884770

U2 - 10.1016/j.physe.2005.12.156

DO - 10.1016/j.physe.2005.12.156

M3 - 文章

AN - SCOPUS:33644884770

SN - 1386-9477

VL - 31

SP - 200

EP - 203

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2

ER -

Separated Al_xIn_1-xN quantum dots grown by plasma-reactive co-sputtering

Abstract

Keywords

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