Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode

Ao Zhang; Jianjun Gao

doi:10.1109/TED.2022.3190239

Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode

Ao Zhang, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Semi-analytical method for the determination of extrinsic and intrinsic model parameters for GaAs-based p-i-n diode is presented in this article. The main advantage is that the air-bridge interconnect inductance is regarded as an independent element and can be distinguished from the feedline effect. The detail model parameters extraction procedure is proposed, and the corresponding closed-form expressions are derived. Good agreement is obtained between the simulated and measured S-parameters up to 110 GHz to verify the validity of the approach.

Original language	English
Pages (from-to)	4848-4852
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	9
DOIs	https://doi.org/10.1109/TED.2022.3190239
State	Published - 1 Sep 2022

Keywords

Diode
GaAs
equivalent circuit model
p-i-n

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10.1109/TED.2022.3190239

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title = "Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode",

abstract = "Semi-analytical method for the determination of extrinsic and intrinsic model parameters for GaAs-based p-i-n diode is presented in this article. The main advantage is that the air-bridge interconnect inductance is regarded as an independent element and can be distinguished from the feedline effect. The detail model parameters extraction procedure is proposed, and the corresponding closed-form expressions are derived. Good agreement is obtained between the simulated and measured S-parameters up to 110 GHz to verify the validity of the approach.",

keywords = "Diode, GaAs, equivalent circuit model, p-i-n",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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T1 - Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2022/9/1

Y1 - 2022/9/1

N2 - Semi-analytical method for the determination of extrinsic and intrinsic model parameters for GaAs-based p-i-n diode is presented in this article. The main advantage is that the air-bridge interconnect inductance is regarded as an independent element and can be distinguished from the feedline effect. The detail model parameters extraction procedure is proposed, and the corresponding closed-form expressions are derived. Good agreement is obtained between the simulated and measured S-parameters up to 110 GHz to verify the validity of the approach.

AB - Semi-analytical method for the determination of extrinsic and intrinsic model parameters for GaAs-based p-i-n diode is presented in this article. The main advantage is that the air-bridge interconnect inductance is regarded as an independent element and can be distinguished from the feedline effect. The detail model parameters extraction procedure is proposed, and the corresponding closed-form expressions are derived. Good agreement is obtained between the simulated and measured S-parameters up to 110 GHz to verify the validity of the approach.

KW - Diode

KW - GaAs

KW - equivalent circuit model

KW - p-i-n

UR - https://www.scopus.com/pages/publications/85135241476

U2 - 10.1109/TED.2022.3190239

DO - 10.1109/TED.2022.3190239

M3 - 文章

AN - SCOPUS:85135241476

SN - 0018-9383

VL - 69

SP - 4848

EP - 4852

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode

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Keywords

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