Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

X. A. Tran; B. Gao; J. F. Kang; X. Wu; L. Wu; Z. Fang; Z. R. Wang; K. L. Pey; Y. C. Yeo; A. Y. Du; M. Liu; B. Y. Nguyen; M. F. Li; H. Y. Yu

doi:10.1109/IEDM.2011.6131648

Self-rectifying and forming-free unipolar HfO _x based-high performance RRAM built by fab-avaialbe materials

X. A. Tran^*
, B. Gao
, J. F. Kang
, X. Wu
, L. Wu
, Z. Fang
, Z. R. Wang
, K. L. Pey
, Y. C. Yeo
, A. Y. Du
, M. Liu
, B. Y. Nguyen
, M. F. Li
, H. Y. Yu

^*Corresponding author for this work

Nanyang Technological University
Peking University
Agency for Science, Technology and Research, Singapore
National University of Singapore
Global Foundries, Inc.
CAS - Institute of Microelectronics
Soitec S.A.
Fudan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO _x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 ³ @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 ⁶ for worst case condition).

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	31.2.1-31.2.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131648
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 5 Dec 2011 → 7 Dec 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	5/12/11 → 7/12/11

Access to Document

10.1109/IEDM.2011.6131648

Cite this

Tran, X. A., Gao, B., Kang, J. F., Wu, X., Wu, L., Fang, Z., Wang, Z. R., Pey, K. L., Yeo, Y. C., Du, A. Y., Liu, M., Nguyen, B. Y., Li, M. F., & Yu, H. Y. (2011). Self-rectifying and forming-free unipolar HfO _x based-high performance RRAM built by fab-avaialbe materials. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 31.2.1-31.2.4). Article 6131648 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131648

@inproceedings{874e00fa9c0c444887ec4474740a4b69,

title = "Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials",

abstract = "In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition).",

author = "Tran, \{X. A.\} and B. Gao and Kang, \{J. F.\} and X. Wu and L. Wu and Z. Fang and Wang, \{Z. R.\} and Pey, \{K. L.\} and Yeo, \{Y. C.\} and Du, \{A. Y.\} and M. Liu and Nguyen, \{B. Y.\} and Li, \{M. F.\} and Yu, \{H. Y.\}",

year = "2011",

doi = "10.1109/IEDM.2011.6131648",

language = "英语",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "31.2.1--31.2.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Tran, XA, Gao, B, Kang, JF, Wu, X, Wu, L, Fang, Z, Wang, ZR, Pey, KL, Yeo, YC, Du, AY, Liu, M, Nguyen, BY, Li, MF & Yu, HY 2011, Self-rectifying and forming-free unipolar HfO _x based-high performance RRAM built by fab-avaialbe materials. in 2011 International Electron Devices Meeting, IEDM 2011., 6131648, Technical Digest - International Electron Devices Meeting, IEDM, pp. 31.2.1-31.2.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131648

Self-rectifying and forming-free unipolar HfO _x based-high performance RRAM built by fab-avaialbe materials. / Tran, X. A.; Gao, B.; Kang, J. F. et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 31.2.1-31.2.4 6131648 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wu, L.

AU - Fang, Z.

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AU - Du, A. Y.

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AB - In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition).

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