Self-Heating Effects Investigation on Nanoscale FinFET and Its Thermal Resistance Modeling

Jun Ya Sun, Ren Hua Liu, Xiao Jin Li, Ya Bin Sun, Yan Ling Shi, Shou Mian Chen, Shao Jian Hu, Ao Guo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The self-heating effect in nanoscale device has become one of the most serious issues in device design for future scaling nodes. In this paper, the thermal characteristics of sub-14-nm FinFETs have been studied and evaluated by the TCAD simulations, in which the hydrodynamic and thermodynamic transport models have been adopted and the parameters have been calibrated with the experimental data. The simulation results show that, 1) heat dissipation is sensitive to the dimension of S/D extension, 2) temperature variation is caused by the change of doping concentration, which can be further suppressed by shrinking the extension length, and 3) different fin widths and fin heights have significant impacts on electrical characteristic, and then on the hotspot and the lumped thermal resistance.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
StatePublished - 5 Dec 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 31 Oct 20183 Nov 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/TerritoryChina
CityQingdao
Period31/10/183/11/18

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