Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition

Bin Jie Chen; Nan Yang; Ni Zhong; Xiao Dong Tang; Ping Xiong Yang; Ping Hua Xiang; Chun Gang Duan

doi:10.1016/j.matlet.2017.05.063

Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition

Bin Jie Chen
, Nan Yang
, Ni Zhong^*
, Xiao Dong Tang
, Ping Xiong Yang
, Ping Hua Xiang
, Chun Gang Duan

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The Ruddlesden-Popper (RP)-type strontium iridate (SrIrO₃ and Sr₂IrO₄) epitaxial thin films are selectively grown from a single Sr₂IrO₄ target using pulsed laser deposition. The stabilization of the SrIrO₃ and Sr₂IrO₄ phase is sensitive to oxygen partial pressure (P_O2). Low laser fluence tends to expand the growth window of pure Sr₂IrO₄ films. The lower P_O2 (≤2.6 Pa) is preferred for preparing Sr₂IrO₄ films, while the SrIrO₃ phase forms at higher P_O2 (≥6.5 Pa). The growth diagram for SrIrO₃ and Sr₂IrO₄ films has been summarized, providing a powerful guideline for fabricating the epitaxial films of single RP-type strontium iridate phase.

Original language	English
Pages (from-to)	96-98
Number of pages	3
Journal	Materials Letters
Volume	202
DOIs	https://doi.org/10.1016/j.matlet.2017.05.063
State	Published - 1 Sep 2017

Keywords

Epitaxial growth
Oxygen partial pressure
Pulsed laser deposition
Thin films

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10.1016/j.matlet.2017.05.063

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title = "Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition",

abstract = "The Ruddlesden-Popper (RP)-type strontium iridate (SrIrO3 and Sr2IrO4) epitaxial thin films are selectively grown from a single Sr2IrO4 target using pulsed laser deposition. The stabilization of the SrIrO3 and Sr2IrO4 phase is sensitive to oxygen partial pressure (PO2). Low laser fluence tends to expand the growth window of pure Sr2IrO4 films. The lower PO2 (≤2.6 Pa) is preferred for preparing Sr2IrO4 films, while the SrIrO3 phase forms at higher PO2 (≥6.5 Pa). The growth diagram for SrIrO3 and Sr2IrO4 films has been summarized, providing a powerful guideline for fabricating the epitaxial films of single RP-type strontium iridate phase.",

keywords = "Epitaxial growth, Oxygen partial pressure, Pulsed laser deposition, Thin films",

author = "Chen, \{Bin Jie\} and Nan Yang and Ni Zhong and Tang, \{Xiao Dong\} and Yang, \{Ping Xiong\} and Xiang, \{Ping Hua\} and Duan, \{Chun Gang\}",

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year = "2017",

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doi = "10.1016/j.matlet.2017.05.063",

language = "英语",

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journal = "Materials Letters",

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TY - JOUR

T1 - Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition

AU - Chen, Bin Jie

AU - Yang, Nan

AU - Zhong, Ni

AU - Tang, Xiao Dong

AU - Yang, Ping Xiong

AU - Xiang, Ping Hua

AU - Duan, Chun Gang

PY - 2017/9/1

Y1 - 2017/9/1

N2 - The Ruddlesden-Popper (RP)-type strontium iridate (SrIrO3 and Sr2IrO4) epitaxial thin films are selectively grown from a single Sr2IrO4 target using pulsed laser deposition. The stabilization of the SrIrO3 and Sr2IrO4 phase is sensitive to oxygen partial pressure (PO2). Low laser fluence tends to expand the growth window of pure Sr2IrO4 films. The lower PO2 (≤2.6 Pa) is preferred for preparing Sr2IrO4 films, while the SrIrO3 phase forms at higher PO2 (≥6.5 Pa). The growth diagram for SrIrO3 and Sr2IrO4 films has been summarized, providing a powerful guideline for fabricating the epitaxial films of single RP-type strontium iridate phase.

AB - The Ruddlesden-Popper (RP)-type strontium iridate (SrIrO3 and Sr2IrO4) epitaxial thin films are selectively grown from a single Sr2IrO4 target using pulsed laser deposition. The stabilization of the SrIrO3 and Sr2IrO4 phase is sensitive to oxygen partial pressure (PO2). Low laser fluence tends to expand the growth window of pure Sr2IrO4 films. The lower PO2 (≤2.6 Pa) is preferred for preparing Sr2IrO4 films, while the SrIrO3 phase forms at higher PO2 (≥6.5 Pa). The growth diagram for SrIrO3 and Sr2IrO4 films has been summarized, providing a powerful guideline for fabricating the epitaxial films of single RP-type strontium iridate phase.

KW - Epitaxial growth

KW - Oxygen partial pressure

KW - Pulsed laser deposition

KW - Thin films

UR - https://www.scopus.com/pages/publications/85019887725

U2 - 10.1016/j.matlet.2017.05.063

DO - 10.1016/j.matlet.2017.05.063

M3 - 文章

AN - SCOPUS:85019887725

SN - 0167-577X

VL - 202

SP - 96

EP - 98

JO - Materials Letters

JF - Materials Letters

ER -

Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition

Abstract

Keywords

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