Selective fabrication of n- and p-type SnO films without doping

Hiroyuki Hayashi; Shota Katayama; Rong Huang; Kosuke Kurushima; Isao Tanaka

doi:10.1002/pssr.201510016

Selective fabrication of n- and p-type SnO films without doping

Hiroyuki Hayashi^*
, Shota Katayama
, Rong Huang
, Kosuke Kurushima
, Isao Tanaka

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)_SnO//(001)_YSZ and [110]_SnO//[100]_YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm²/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.

Original language	English
Pages (from-to)	192-196
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201510016
State	Published - 1 Mar 2015

Keywords

Epitaxial growth
Optical transmission
Oxide semiconductors
Oxygen partial pressure
Pulsed laser deposition
SnO
Thin films

Access to Document

10.1002/pssr.201510016

Cite this

@article{4520b671e5c644edb94cca577bdb6903,

title = "Selective fabrication of n- and p-type SnO films without doping",

abstract = "Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.",

keywords = "Epitaxial growth, Optical transmission, Oxide semiconductors, Oxygen partial pressure, Pulsed laser deposition, SnO, Thin films",

author = "Hiroyuki Hayashi and Shota Katayama and Rong Huang and Kosuke Kurushima and Isao Tanaka",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = mar,

day = "1",

doi = "10.1002/pssr.201510016",

language = "英语",

volume = "9",

pages = "192--196",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Selective fabrication of n- and p-type SnO films without doping

AU - Hayashi, Hiroyuki

AU - Katayama, Shota

AU - Huang, Rong

AU - Kurushima, Kosuke

AU - Tanaka, Isao

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.

AB - Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.

KW - Epitaxial growth

KW - Optical transmission

KW - Oxide semiconductors

KW - Oxygen partial pressure

KW - Pulsed laser deposition

KW - SnO

KW - Thin films

UR - https://www.scopus.com/pages/publications/84925391476

U2 - 10.1002/pssr.201510016

DO - 10.1002/pssr.201510016

M3 - 文章

AN - SCOPUS:84925391476

SN - 1862-6254

VL - 9

SP - 192

EP - 196

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 3

ER -

Selective fabrication of n- and p-type SnO films without doping

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this