Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

  • Z. J. Qiu*
  • , Y. S. Gui
  • , T. Lin
  • , J. Lu
  • , N. Tang
  • , B. Shen
  • , N. Dai
  • , J. H. Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al0.22Ga0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τtq∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin-orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T-1 law, indicating that electron-electron scattering with small energy transfer is the dominant inelastic process.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalSolid State Communications
Volume131
Issue number1
DOIs
StatePublished - Jul 2004
Externally publishedYes

Keywords

  • A. Quantum well
  • D. Magnetoresistance
  • D. Two-dimensional electron gas

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