Abstract
We investigate the heteroepitaxial growth of Bi 2Se 3 films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi 2Se 3 on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi 2Se 3 and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi 2Se 3 thin films, which can be ascribed to the charge transfer at the interface.
| Original language | English |
|---|---|
| Article number | 475604 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 24 |
| Issue number | 47 |
| DOIs | |
| State | Published - 28 Nov 2012 |
| Externally published | Yes |