Scanning tunneling microscopy of interface properties of Bi 2Se 3 on FeSe

  • Yilin Wang*
  • , Yeping Jiang
  • , Mu Chen
  • , Zhi Li
  • , Canli Song
  • , Lili Wang
  • , Ke He
  • , Xi Chen
  • , Xucun Ma
  • , Qi Kun Xue
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We investigate the heteroepitaxial growth of Bi 2Se 3 films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi 2Se 3 on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi 2Se 3 and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi 2Se 3 thin films, which can be ascribed to the charge transfer at the interface.

Original languageEnglish
Article number475604
JournalJournal of Physics Condensed Matter
Volume24
Issue number47
DOIs
StatePublished - 28 Nov 2012
Externally publishedYes

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