Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon

C. Q. Sun; L. K. Pan; C. M. Li

Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon

C. Q. Sun^*
, L. K. Pan
, C. M. Li

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.

Original language	English
Title of host publication	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
Editors	M. Laudon, B. Romanowicz
Pages	554-556
Number of pages	3
State	Published - 2005
Externally published	Yes
Event	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States Duration: 8 May 2005 → 12 May 2005

Publication series

Name	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Conference

Conference	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
Country/Territory	United States
City	Anaheim, CA
Period	8/05/05 → 12/05/05

Keywords

Acoustic phonons and optical phonons
Dielectrics
Photoabsorption
Photoemission
Porous silicon

Cite this

Sun, C. Q., Pan, L. K., & Li, C. M. (2005). Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon. In M. Laudon, & B. Romanowicz (Eds.), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings (pp. 554-556). (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Sun, C. Q. ; Pan, L. K. ; Li, C. M. / Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. editor / M. Laudon ; B. Romanowicz. 2005. pp. 554-556 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

@inproceedings{6a468a2b3ef24c59a518c9049e621e3f,

title = "Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon",

abstract = "Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.",

keywords = "Acoustic phonons and optical phonons, Dielectrics, Photoabsorption, Photoemission, Porous silicon",

author = "Sun, \{C. Q.\} and Pan, \{L. K.\} and Li, \{C. M.\}",

year = "2005",

language = "英语",

isbn = "0976798514",

series = "2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings",

pages = "554--556",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings",

note = "2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 ; Conference date: 08-05-2005 Through 12-05-2005",

}

Sun, CQ, Pan, LK & Li, CM 2005, Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon. in M Laudon & B Romanowicz (eds), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp. 554-556, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005, Anaheim, CA, United States, 8/05/05.

Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon. / Sun, C. Q.; Pan, L. K.; Li, C. M.
2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. ed. / M. Laudon; B. Romanowicz. 2005. p. 554-556 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon

AU - Sun, C. Q.

AU - Pan, L. K.

AU - Li, C. M.

PY - 2005

Y1 - 2005

N2 - Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.

AB - Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.

KW - Acoustic phonons and optical phonons

KW - Dielectrics

KW - Photoabsorption

KW - Photoemission

KW - Porous silicon

UR - https://www.scopus.com/pages/publications/32144453100

M3 - 会议稿件

AN - SCOPUS:32144453100

SN - 0976798514

SN - 9780976798514

T3 - 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

SP - 554

EP - 556

BT - 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005

Y2 - 8 May 2005 through 12 May 2005

ER -

Sun CQ, Pan LK, Li CM. Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon. In Laudon M, Romanowicz B, editors, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005. p. 554-556. (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Scaling relation for the size dependence of acoustic, dielectric and photoelectronic behaviour of manosolid silicon

Abstract

Publication series

Conference

Keywords

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