Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

Guoxiang Zhang; Xuanwu Kang; Yingkui Zheng; Hao Wu; Rikang Zhao; Yuyan Huang; Zhenglin Zhang; Ao Zhang; Jianjun Gao; Ke Wei; Xinyu Liu

doi:10.1109/TED.2024.3479155

Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

Guoxiang Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Rikang Zhao, Yuyan Huang, Zhenglin Zhang, Ao Zhang, Jianjun Gao, Ke Wei, Xinyu Liu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled S-parameters under multibias bias conditions, it is verified that the scaling rule dependent on the effective junction area of the device can better predict the performance of large-size devices in the frequency range of 0.1–20 GHz. In addition, the C-band limiter is successfully designed by using the scalable SBD model. The physical and simulated S-parameters have good consistency, which further verifies the accuracy of the model.

Original language	English
Pages (from-to)	7350-7357
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	12
DOIs	https://doi.org/10.1109/TED.2024.3479155
State	Published - 2024

Keywords

Limiter
Schottky barrier diode (SBD)
model

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10.1109/TED.2024.3479155

Cite this

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title = "Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design",

abstract = "In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled S-parameters under multibias bias conditions, it is verified that the scaling rule dependent on the effective junction area of the device can better predict the performance of large-size devices in the frequency range of 0.1–20 GHz. In addition, the C-band limiter is successfully designed by using the scalable SBD model. The physical and simulated S-parameters have good consistency, which further verifies the accuracy of the model.",

keywords = "Limiter, Schottky barrier diode (SBD), model",

author = "Guoxiang Zhang and Xuanwu Kang and Yingkui Zheng and Hao Wu and Rikang Zhao and Yuyan Huang and Zhenglin Zhang and Ao Zhang and Jianjun Gao and Ke Wei and Xinyu Liu",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.",

year = "2024",

doi = "10.1109/TED.2024.3479155",

language = "英语",

volume = "71",

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journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

AU - Zhang, Guoxiang

AU - Kang, Xuanwu

AU - Zheng, Yingkui

AU - Wu, Hao

AU - Zhao, Rikang

AU - Huang, Yuyan

AU - Zhang, Zhenglin

AU - Zhang, Ao

AU - Gao, Jianjun

AU - Wei, Ke

AU - Liu, Xinyu

PY - 2024

Y1 - 2024

N2 - In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled S-parameters under multibias bias conditions, it is verified that the scaling rule dependent on the effective junction area of the device can better predict the performance of large-size devices in the frequency range of 0.1–20 GHz. In addition, the C-band limiter is successfully designed by using the scalable SBD model. The physical and simulated S-parameters have good consistency, which further verifies the accuracy of the model.

AB - In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled S-parameters under multibias bias conditions, it is verified that the scaling rule dependent on the effective junction area of the device can better predict the performance of large-size devices in the frequency range of 0.1–20 GHz. In addition, the C-band limiter is successfully designed by using the scalable SBD model. The physical and simulated S-parameters have good consistency, which further verifies the accuracy of the model.

KW - Limiter

KW - Schottky barrier diode (SBD)

KW - model

UR - https://www.scopus.com/pages/publications/85208226233

U2 - 10.1109/TED.2024.3479155

DO - 10.1109/TED.2024.3479155

M3 - 文章

AN - SCOPUS:85208226233

SN - 0018-9383

VL - 71

SP - 7350

EP - 7357

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

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