Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect

Jing Bai; Ao Zhang; Jianjun Gao

doi:10.1109/LMWT.2024.3471874

Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect

Jing Bai
, Ao Zhang^*
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An improved scalable large-signal model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEHEMT model is proposed. The derived DC model can accurately predict the current-voltage behavior including the kink effect over a wide range of bias points by introducing the parameter V_kink and new equations using fitting parameters. To ensure the scalability of the model, the scaling rules are modified. The proposed model has been validated by comparing the measured and modeled DC I-V characteristics and multibias scattering parameters (S-parameters) up to 40 GHz for GaN HEMTs with different gate widths including 2× 25μ m, 2× 50μ m, 2× 75μ m, and 2× 100μ m gate width (number of gate fingers × unit gate width).

Original language	English
Pages (from-to)	1339-1342
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1109/LMWT.2024.3471874
State	Published - 2024

Keywords

EEHEMT model
gallium nitride (GaN)
high-electron-mobility transistors (HEMTs)
kink effect
scalable large-signal model

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10.1109/LMWT.2024.3471874

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@article{aaf485b9e3b54aad947f0e0061bd083d,

title = "Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect",

abstract = "An improved scalable large-signal model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEHEMT model is proposed. The derived DC model can accurately predict the current-voltage behavior including the kink effect over a wide range of bias points by introducing the parameter Vkink and new equations using fitting parameters. To ensure the scalability of the model, the scaling rules are modified. The proposed model has been validated by comparing the measured and modeled DC I-V characteristics and multibias scattering parameters (S-parameters) up to 40 GHz for GaN HEMTs with different gate widths including 2× 25μ m, 2× 50μ m, 2× 75μ m, and 2× 100μ m gate width (number of gate fingers × unit gate width).",

keywords = "EEHEMT model, gallium nitride (GaN), high-electron-mobility transistors (HEMTs), kink effect, scalable large-signal model",

author = "Jing Bai and Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.",

year = "2024",

doi = "10.1109/LMWT.2024.3471874",

language = "英语",

volume = "34",

pages = "1339--1342",

journal = "IEEE Microwave and Wireless Technology Letters",

issn = "2771-957X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect

AU - Bai, Jing

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024

Y1 - 2024

N2 - An improved scalable large-signal model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEHEMT model is proposed. The derived DC model can accurately predict the current-voltage behavior including the kink effect over a wide range of bias points by introducing the parameter Vkink and new equations using fitting parameters. To ensure the scalability of the model, the scaling rules are modified. The proposed model has been validated by comparing the measured and modeled DC I-V characteristics and multibias scattering parameters (S-parameters) up to 40 GHz for GaN HEMTs with different gate widths including 2× 25μ m, 2× 50μ m, 2× 75μ m, and 2× 100μ m gate width (number of gate fingers × unit gate width).

AB - An improved scalable large-signal model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEHEMT model is proposed. The derived DC model can accurately predict the current-voltage behavior including the kink effect over a wide range of bias points by introducing the parameter Vkink and new equations using fitting parameters. To ensure the scalability of the model, the scaling rules are modified. The proposed model has been validated by comparing the measured and modeled DC I-V characteristics and multibias scattering parameters (S-parameters) up to 40 GHz for GaN HEMTs with different gate widths including 2× 25μ m, 2× 50μ m, 2× 75μ m, and 2× 100μ m gate width (number of gate fingers × unit gate width).

KW - EEHEMT model

KW - gallium nitride (GaN)

KW - high-electron-mobility transistors (HEMTs)

KW - kink effect

KW - scalable large-signal model

UR - https://www.scopus.com/pages/publications/85211487353

U2 - 10.1109/LMWT.2024.3471874

DO - 10.1109/LMWT.2024.3471874

M3 - 文章

AN - SCOPUS:85211487353

SN - 2771-957X

VL - 34

SP - 1339

EP - 1342

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 12

ER -

Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect

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Keywords

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