Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films

P. H. Xiang; S. Asanuma; H. Yamada; I. H. Inoue; H. Akoh; A. Sawa

doi:10.1063/1.3467199

Room temperature Mott metal-insulator transition and its systematic control in Sm_1-xCa_xNiO₃ thin films

P. H. Xiang^*
, S. Asanuma
, H. Yamada
, I. H. Inoue
, H. Akoh
, A. Sawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report an epitaxial growth and electronic transport properties of Ca-doped SmNiO₃ (Sm_1-xCa_xNiO₃, 0≤x≤0.1) thin films deposited on (001)-oriented LaAlO₃ substrates by the pulsed laser deposition method. Due to strong electron correlations of the Sm_1-xCa_xNiO₃ films, the Mott metal-insulator (MI) transition appears around 370 K, which decreases to room temperature only by the 1%-2% Ca doping, and dramatically shifts to lower temperatures by increasing the Ca content. For x0.1, the film reveals metallic conductivity down to the lowest temperature measured. In the insulating phase of x<0.04, we observe another resistivity anomaly around 200 K corresponding to an antiferromagnetic ordering of the Ni sublattice of SmNiO₃ matrix. A complete electronic phase diagram of the Sm_1-xCa _xNiO₃ thin film is unveiled by this work.

Original language	English
Article number	032114
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467199
State	Published - 19 Jul 2010
Externally published	Yes

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title = "Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films",

abstract = "We report an epitaxial growth and electronic transport properties of Ca-doped SmNiO3 (Sm1-xCaxNiO3, 0≤x≤0.1) thin films deposited on (001)-oriented LaAlO3 substrates by the pulsed laser deposition method. Due to strong electron correlations of the Sm1-xCaxNiO3 films, the Mott metal-insulator (MI) transition appears around 370 K, which decreases to room temperature only by the 1\%-2\% Ca doping, and dramatically shifts to lower temperatures by increasing the Ca content. For x0.1, the film reveals metallic conductivity down to the lowest temperature measured. In the insulating phase of x<0.04, we observe another resistivity anomaly around 200 K corresponding to an antiferromagnetic ordering of the Ni sublattice of SmNiO3 matrix. A complete electronic phase diagram of the Sm1-xCa xNiO3 thin film is unveiled by this work.",

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doi = "10.1063/1.3467199",

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T1 - Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films

AU - Xiang, P. H.

AU - Asanuma, S.

AU - Yamada, H.

AU - Inoue, I. H.

AU - Akoh, H.

AU - Sawa, A.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - We report an epitaxial growth and electronic transport properties of Ca-doped SmNiO3 (Sm1-xCaxNiO3, 0≤x≤0.1) thin films deposited on (001)-oriented LaAlO3 substrates by the pulsed laser deposition method. Due to strong electron correlations of the Sm1-xCaxNiO3 films, the Mott metal-insulator (MI) transition appears around 370 K, which decreases to room temperature only by the 1%-2% Ca doping, and dramatically shifts to lower temperatures by increasing the Ca content. For x0.1, the film reveals metallic conductivity down to the lowest temperature measured. In the insulating phase of x<0.04, we observe another resistivity anomaly around 200 K corresponding to an antiferromagnetic ordering of the Ni sublattice of SmNiO3 matrix. A complete electronic phase diagram of the Sm1-xCa xNiO3 thin film is unveiled by this work.

AB - We report an epitaxial growth and electronic transport properties of Ca-doped SmNiO3 (Sm1-xCaxNiO3, 0≤x≤0.1) thin films deposited on (001)-oriented LaAlO3 substrates by the pulsed laser deposition method. Due to strong electron correlations of the Sm1-xCaxNiO3 films, the Mott metal-insulator (MI) transition appears around 370 K, which decreases to room temperature only by the 1%-2% Ca doping, and dramatically shifts to lower temperatures by increasing the Ca content. For x0.1, the film reveals metallic conductivity down to the lowest temperature measured. In the insulating phase of x<0.04, we observe another resistivity anomaly around 200 K corresponding to an antiferromagnetic ordering of the Ni sublattice of SmNiO3 matrix. A complete electronic phase diagram of the Sm1-xCa xNiO3 thin film is unveiled by this work.

UR - https://www.scopus.com/pages/publications/77956210295

U2 - 10.1063/1.3467199

DO - 10.1063/1.3467199

M3 - 文章

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SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032114

ER -

Room temperature Mott metal-insulator transition and its systematic control in Sm_1-xCa_xNiO₃ thin films

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