Room temperature InGaAs hot electron detector for THz/subTHz regions

Jinchao Tong; Jingguo Huang; Zhiming Huang; Junhao Chu

doi:10.1117/12.2054015

Room temperature InGaAs hot electron detector for THz/subTHz regions

Jinchao Tong^*
, Jingguo Huang
, Zhiming Huang
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A THz/subTHz radiation detector based on MOCVD-grown modulation-doped In_xGa_1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10^-9 W/Hz^1/2 at room temperatures.

Original language	English
Title of host publication	Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics
Subtitle of host publication	Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013
DOIs	https://doi.org/10.1117/12.2054015
State	Published - 2014
Externally published	Yes
Event	Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013 - SuZhou, China Duration: 20 Oct 2013 → 29 Oct 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9142
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013
Country/Territory	China
City	SuZhou
Period	20/10/13 → 29/10/13

Keywords

Antenna simulation
Detector
InGaAs
Terahertz

Access to Document

10.1117/12.2054015

Cite this

Tong, J., Huang, J., Huang, Z., & Chu, J. (2014). Room temperature InGaAs hot electron detector for THz/subTHz regions. In Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013 Article 914202 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9142). https://doi.org/10.1117/12.2054015

Tong, Jinchao ; Huang, Jingguo ; Huang, Zhiming et al. / Room temperature InGaAs hot electron detector for THz/subTHz regions. Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013. 2014. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{10ce556ba46d44d4a801719c112d2764,

title = "Room temperature InGaAs hot electron detector for THz/subTHz regions",

abstract = "A THz/subTHz radiation detector based on MOCVD-grown modulation-doped InxGa1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10-9 W/Hz1/2 at room temperatures.",

keywords = "Antenna simulation, Detector, InGaAs, Terahertz",

author = "Jinchao Tong and Jingguo Huang and Zhiming Huang and Junhao Chu",

year = "2014",

doi = "10.1117/12.2054015",

language = "英语",

isbn = "9781628410938",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics",

note = "Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013 ; Conference date: 20-10-2013 Through 29-10-2013",

}

Tong, J, Huang, J, Huang, Z & Chu, J 2014, Room temperature InGaAs hot electron detector for THz/subTHz regions. in Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013., 914202, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9142, Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, 20/10/13. https://doi.org/10.1117/12.2054015

Room temperature InGaAs hot electron detector for THz/subTHz regions. / Tong, Jinchao; Huang, Jingguo; Huang, Zhiming et al.
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013. 2014. 914202 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9142).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Room temperature InGaAs hot electron detector for THz/subTHz regions

AU - Tong, Jinchao

AU - Huang, Jingguo

AU - Huang, Zhiming

AU - Chu, Junhao

PY - 2014

Y1 - 2014

N2 - A THz/subTHz radiation detector based on MOCVD-grown modulation-doped InxGa1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10-9 W/Hz1/2 at room temperatures.

AB - A THz/subTHz radiation detector based on MOCVD-grown modulation-doped InxGa1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10-9 W/Hz1/2 at room temperatures.

KW - Antenna simulation

KW - Detector

KW - InGaAs

KW - Terahertz

UR - https://www.scopus.com/pages/publications/84896770863

U2 - 10.1117/12.2054015

DO - 10.1117/12.2054015

M3 - 会议稿件

AN - SCOPUS:84896770863

SN - 9781628410938

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics

T2 - Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013

Y2 - 20 October 2013 through 29 October 2013

ER -

Tong J, Huang J, Huang Z, Chu J. Room temperature InGaAs hot electron detector for THz/subTHz regions. In Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013. 2014. 914202. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2054015

Room temperature InGaAs hot electron detector for THz/subTHz regions

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