Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

L. S. Zhu; J. Zhang; X. W. Xu; Y. Z. Yu; X. Wu; T. Yang; X. H. Wang

doi:10.1016/j.snb.2015.12.080

Room temperature H₂ detection based on Pd/SiNWs/p-Si Schottky diode structure

L. S. Zhu
, J. Zhang^*
, X. W. Xu
, Y. Z. Yu
, X. Wu
, T. Yang
, X. H. Wang

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H₂ detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H₂ at room temperature revealed that the diode sensors can sense H₂ in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H₂ at room temperature.

Original language	English
Pages (from-to)	515-523
Number of pages	9
Journal	Sensors and Actuators B: Chemical
Volume	227
DOIs	https://doi.org/10.1016/j.snb.2015.12.080
State	Published - 1 May 2016

Keywords

Electroless
Fixed potential amperometry
H detection
Pd/SiNWs
Room temperature

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10.1016/j.snb.2015.12.080

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title = "Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure",

abstract = "In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.",

keywords = "Electroless, Fixed potential amperometry, H detection, Pd/SiNWs, Room temperature",

author = "Zhu, \{L. S.\} and J. Zhang and Xu, \{X. W.\} and Yu, \{Y. Z.\} and X. Wu and T. Yang and Wang, \{X. H.\}",

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doi = "10.1016/j.snb.2015.12.080",

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TY - JOUR

T1 - Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

AU - Zhu, L. S.

AU - Zhang, J.

AU - Xu, X. W.

AU - Yu, Y. Z.

AU - Wu, X.

AU - Yang, T.

AU - Wang, X. H.

PY - 2016/5/1

Y1 - 2016/5/1

N2 - In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.

AB - In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.

KW - Electroless

KW - Fixed potential amperometry

KW - H detection

KW - Pd/SiNWs

KW - Room temperature

UR - https://www.scopus.com/pages/publications/84953898354

U2 - 10.1016/j.snb.2015.12.080

DO - 10.1016/j.snb.2015.12.080

M3 - 文章

AN - SCOPUS:84953898354

SN - 0925-4005

VL - 227

SP - 515

EP - 523

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

ER -

Room temperature H₂ detection based on Pd/SiNWs/p-Si Schottky diode structure

Abstract

Keywords

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