Room-temperature ferroelectricity in magnetically ordered CoH2SeO4 flakes

Luqiu Chen, Bing Yu, Yang Shen, Yifei Liu, Haonan Wang, Guangdi Feng, Qiuxiang Zhu*, Weidong Luo, Junming Liu, Jianguo Wan, Qingbiao Zhao*, Bobo Tian*, Junhao Chu, Chungang Duan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Here, we demonstrate the existence of magnetic ordering and sliding ferroelectricity in two-dimensional CoH2SeO4 multilayers. The experimental result reveals the antiferromagnetic order in powder sample, and first-principles calculation indicates the antiferromagnetic ground state with TN≈75 K in CoH2SeO4 single layer. The sliding ferroelectricity with an asymmetric triplet potential well is theoretically predicted and experimentally confirmed by 180°-piezoelectric hysteresis loops, switchable domains and second harmonic generation signals in CoH2SeO4 multilayers. The vertically stacked ferroelectric capacitor shows both polarization and capacitance hysteresis loops. A ferroelectric transition temperature of ~370 K is obtained from the temperature-dependent dielectricity. The emergence of sliding ferroelectricity and anti-ferromagnetism points out a new route for obtaining low-dimensional multiferroic materials.

Translated title of the contribution磁有序CoH2SeO4薄片中的室温铁电性
Original languageEnglish
Pages (from-to)1654-1660
Number of pages7
JournalScience China Materials
Volume67
Issue number5
DOIs
StatePublished - May 2024

Keywords

  • multiferroic materials
  • sliding ferroelectricity
  • two-dimensional materials

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