Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si

Y. N. Dou; Y. He; C. Y. Huang; C. L. Zhou; X. G. Ma; R. Chen; J. H. Chu

doi:10.1007/s00339-012-7097-x

Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al₂O₃ on crystalline-Si

Y. N. Dou^*
, Y. He
, C. Y. Huang
, C. L. Zhou
, X. G. Ma
, R. Chen
, J. H. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this work, surface passivation of thermal atomic layer deposited (ALD) Al₂O₃ films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ∼0 cm-2 to ^-2 × 10¹² cm^-2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO _x layer.

Original language	English
Pages (from-to)	673-677
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	109
Issue number	3
DOIs	https://doi.org/10.1007/s00339-012-7097-x
State	Published - Nov 2012
Externally published	Yes

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title = "Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si",

abstract = "In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ∼0 cm-2 to -2 × 1012 cm-2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO x layer.",

author = "Dou, \{Y. N.\} and Y. He and Huang, \{C. Y.\} and Zhou, \{C. L.\} and Ma, \{X. G.\} and R. Chen and Chu, \{J. H.\}",

year = "2012",

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doi = "10.1007/s00339-012-7097-x",

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T1 - Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si

AU - Dou, Y. N.

AU - He, Y.

AU - Huang, C. Y.

AU - Zhou, C. L.

AU - Ma, X. G.

AU - Chen, R.

AU - Chu, J. H.

PY - 2012/11

Y1 - 2012/11

N2 - In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ∼0 cm-2 to -2 × 1012 cm-2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO x layer.

AB - In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ∼0 cm-2 to -2 × 1012 cm-2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiO x layer.

UR - https://www.scopus.com/pages/publications/84870243225

U2 - 10.1007/s00339-012-7097-x

DO - 10.1007/s00339-012-7097-x

M3 - 文章

AN - SCOPUS:84870243225

SN - 0947-8396

VL - 109

SP - 673

EP - 677

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al₂O₃ on crystalline-Si

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