Robust exciton-polariton effect in a ZnO whispering gallery microcavity at high temperature

Saifeng Zhang; Wei Xie; Hongxing Dong; Liaoxin Sun; Yanjing Ling; Jian Lu; Yu Duan; Wenzhong Shen; Xuechu Shen; Zhanghai Chen

doi:10.1063/1.3693378

Robust exciton-polariton effect in a ZnO whispering gallery microcavity at high temperature

Saifeng Zhang, Wei Xie, Hongxing Dong, Liaoxin Sun, Yanjing Ling, Jian Lu, Yu Duan, Wenzhong Shen, Xuechu Shen, Zhanghai Chen

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

A robust exciton-polariton effect in a ZnO whispering gallery microcavity well above room temperature is presented. The lower polariton branches are tuned by current induced thermal effect. The red shift can be as large as ∼40 meV. It is found that the strong coupling can be preserved and the polariton-phonon interaction quenching effect remains up to ∼550 K, while the Rabi splitting is about 330 meV. The tuning speed is in the order of millisecond, showing its potential in polariton-based optoelectronic device application.

Original language	English
Article number	101912
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3693378
State	Published - 5 Mar 2012
Externally published	Yes

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title = "Robust exciton-polariton effect in a ZnO whispering gallery microcavity at high temperature",

abstract = "A robust exciton-polariton effect in a ZnO whispering gallery microcavity well above room temperature is presented. The lower polariton branches are tuned by current induced thermal effect. The red shift can be as large as ∼40 meV. It is found that the strong coupling can be preserved and the polariton-phonon interaction quenching effect remains up to ∼550 K, while the Rabi splitting is about 330 meV. The tuning speed is in the order of millisecond, showing its potential in polariton-based optoelectronic device application.",

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T1 - Robust exciton-polariton effect in a ZnO whispering gallery microcavity at high temperature

AU - Zhang, Saifeng

AU - Xie, Wei

AU - Dong, Hongxing

AU - Sun, Liaoxin

AU - Ling, Yanjing

AU - Lu, Jian

AU - Duan, Yu

AU - Shen, Wenzhong

AU - Shen, Xuechu

AU - Chen, Zhanghai

PY - 2012/3/5

Y1 - 2012/3/5

N2 - A robust exciton-polariton effect in a ZnO whispering gallery microcavity well above room temperature is presented. The lower polariton branches are tuned by current induced thermal effect. The red shift can be as large as ∼40 meV. It is found that the strong coupling can be preserved and the polariton-phonon interaction quenching effect remains up to ∼550 K, while the Rabi splitting is about 330 meV. The tuning speed is in the order of millisecond, showing its potential in polariton-based optoelectronic device application.

AB - A robust exciton-polariton effect in a ZnO whispering gallery microcavity well above room temperature is presented. The lower polariton branches are tuned by current induced thermal effect. The red shift can be as large as ∼40 meV. It is found that the strong coupling can be preserved and the polariton-phonon interaction quenching effect remains up to ∼550 K, while the Rabi splitting is about 330 meV. The tuning speed is in the order of millisecond, showing its potential in polariton-based optoelectronic device application.

UR - https://www.scopus.com/pages/publications/84863361677

U2 - 10.1063/1.3693378

DO - 10.1063/1.3693378

M3 - 文章

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101912

ER -

Robust exciton-polariton effect in a ZnO whispering gallery microcavity at high temperature

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