RF magnetron sputtered indium tin oxide thin films for application in solar cells

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2 Scopus citations

Abstract

Indium tin oxide (ITO) films were deposited at room temperature with no oxygen flow on glass substrates by RF magnetron sputtering. The effects of sputtering power and argon ambient pressure were investigated. The morphology, structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS transmission spectroscopy. The deposited ITO films with 300nm thickness show a high transparency between 80 and 90% in the visible spectrum and 15Ω/ □ sheet resistance. The ITO films are suitable for application in CuInSe2 thin film solar cell as transparent conductive electrode layers.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages728-731
Number of pages4
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 24 Mar 200827 Mar 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/TerritoryChina
CityShanghai
Period24/03/0827/03/08

Keywords

  • Indium tin oxide (ITO) films
  • Room temperature
  • Sputtering

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