Retention trimming for wear reduction of flash memory storage systems

Liang Shi, Kaijie Wu, Mengying Zhao, Chun Jason Xue, Edwin H.M. Sha

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming.

Original languageEnglish
Title of host publicationDAC 2014 - 51st Design Automation Conference, Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479930173
DOIs
StatePublished - 2014
Externally publishedYes
Event51st Annual Design Automation Conference, DAC 2014 - San Francisco, CA, United States
Duration: 2 Jun 20145 Jun 2014

Publication series

NameProceedings - Design Automation Conference
ISSN (Print)0738-100X

Conference

Conference51st Annual Design Automation Conference, DAC 2014
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/06/145/06/14

Keywords

  • Flash Memory
  • Retention Time
  • Wear Reduction

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