Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems

Liang Shi; Kaijie Wu; Mengying Zhao; Chun Jason Xue; Duo Liu; Edwin H.M. Sha

doi:10.1109/TCAD.2015.2453369

Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems

Liang Shi
, Kaijie Wu^*
, Mengying Zhao
, Chun Jason Xue
, Duo Liu
, Edwin H.M. Sha

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the data lifetime, is proposed to reduce the wearing of flash memory, and hence improve the endurance of flash memory. Extensive experimental results show that the proposed technique achieves significant endurance improvements.

Original language	English
Article number	7152865
Pages (from-to)	58-71
Number of pages	14
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/TCAD.2015.2453369
State	Published - Jan 2016
Externally published	Yes

Keywords

Flash lifetime
garbage collection (GC)
retention time
retention time prediction
wear leveling (WL)

Access to Document

10.1109/TCAD.2015.2453369

Cite this

@article{7f68c43bbcbd48088609098287258225,

title = "Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems",

abstract = "NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the data lifetime, is proposed to reduce the wearing of flash memory, and hence improve the endurance of flash memory. Extensive experimental results show that the proposed technique achieves significant endurance improvements.",

keywords = "Flash lifetime, garbage collection (GC), retention time, retention time prediction, wear leveling (WL)",

author = "Liang Shi and Kaijie Wu and Mengying Zhao and Xue, \{Chun Jason\} and Duo Liu and Sha, \{Edwin H.M.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

month = jan,

doi = "10.1109/TCAD.2015.2453369",

language = "英语",

volume = "35",

pages = "58--71",

journal = "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems",

issn = "0278-0070",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems

AU - Shi, Liang

AU - Wu, Kaijie

AU - Zhao, Mengying

AU - Xue, Chun Jason

AU - Liu, Duo

AU - Sha, Edwin H.M.

PY - 2016/1

Y1 - 2016/1

N2 - NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the data lifetime, is proposed to reduce the wearing of flash memory, and hence improve the endurance of flash memory. Extensive experimental results show that the proposed technique achieves significant endurance improvements.

AB - NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the data lifetime, is proposed to reduce the wearing of flash memory, and hence improve the endurance of flash memory. Extensive experimental results show that the proposed technique achieves significant endurance improvements.

KW - Flash lifetime

KW - garbage collection (GC)

KW - retention time

KW - retention time prediction

KW - wear leveling (WL)

UR - https://www.scopus.com/pages/publications/84961683008

U2 - 10.1109/TCAD.2015.2453369

DO - 10.1109/TCAD.2015.2453369

M3 - 文章

AN - SCOPUS:84961683008

SN - 0278-0070

VL - 35

SP - 58

EP - 71

JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IS - 1

M1 - 7152865

ER -

Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this