Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure

J. L. Sun; X. J. Meng; J. H. Ma; T. Lin; J. Chen; N. Dai; J. H. Chu

doi:10.1007/s00339-004-2564-7

Retention characteristics of Au/Bi_3.25La_0.75Ti ₃O₁₂/Si metal-ferro- electric-semiconductor structure

J. L. Sun^*
, X. J. Meng
, J. H. Ma
, T. Lin
, J. Chen
, N. Dai
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Lanthanum-substituted bismuth titanate (Bi_3.25La _0.75Ti₃O₁₂) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.

Original language	English
Pages (from-to)	389-392
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	81
Issue number	2
DOIs	https://doi.org/10.1007/s00339-004-2564-7
State	Published - Jul 2005
Externally published	Yes

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title = "Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure",

abstract = "Lanthanum-substituted bismuth titanate (Bi3.25La 0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.",

author = "Sun, \{J. L.\} and Meng, \{X. J.\} and Ma, \{J. H.\} and T. Lin and J. Chen and N. Dai and Chu, \{J. H.\}",

year = "2005",

month = jul,

doi = "10.1007/s00339-004-2564-7",

language = "英语",

volume = "81",

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journal = "Applied Physics A: Materials Science and Processing",

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TY - JOUR

T1 - Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure

AU - Sun, J. L.

AU - Meng, X. J.

AU - Ma, J. H.

AU - Lin, T.

AU - Chen, J.

AU - Dai, N.

AU - Chu, J. H.

PY - 2005/7

Y1 - 2005/7

N2 - Lanthanum-substituted bismuth titanate (Bi3.25La 0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.

AB - Lanthanum-substituted bismuth titanate (Bi3.25La 0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.

UR - https://www.scopus.com/pages/publications/18844414262

U2 - 10.1007/s00339-004-2564-7

DO - 10.1007/s00339-004-2564-7

M3 - 文章

AN - SCOPUS:18844414262

SN - 0947-8396

VL - 81

SP - 389

EP - 392

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

Retention characteristics of Au/Bi_3.25La_0.75Ti ₃O₁₂/Si metal-ferro- electric-semiconductor structure

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