Abstract
The metal-insulator-semiconductor (MIS) structure of a-Si:H has been made, and from which, the capacitance - voltage (C - V) and conductance - voltage (G - V) characteristics have been measured at 50°C and in the dark background. By revising the influence of the series resistance and the deep levels in the a-Si:H MIS device and from the general theory of MIS structures, the electron response time constant and the capture cross-section of the gap states have been obtained, which are in good agreement with other authors'.
| Original language | English |
|---|---|
| Pages (from-to) | 236-240 |
| Number of pages | 5 |
| Journal | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
| Volume | 14 |
| Issue number | 3 |
| State | Published - Aug 1994 |
| Externally published | Yes |