Resistive switching mechanism in the one diode-one resistor memory based on p+ -Si/n-ZnO heterostructure revealed by in-situ TEM

Lei Zhang; Liang Zhu; Xiaomei Li; Zhi Xu; Wenlong Wang; Xuedong Bai

doi:10.1038/srep45143

Resistive switching mechanism in the one diode-one resistor memory based on p⁺ -Si/n-ZnO heterostructure revealed by in-situ TEM

Lei Zhang
, Liang Zhu
, Xiaomei Li
, Zhi Xu
, Wenlong Wang
, Xuedong Bai^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p⁺ -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

Original language	English
Article number	45143
Journal	Scientific Reports
Volume	7
DOIs	https://doi.org/10.1038/srep45143
State	Published - 21 Mar 2017
Externally published	Yes

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title = "Resistive switching mechanism in the one diode-one resistor memory based on p+ -Si/n-ZnO heterostructure revealed by in-situ TEM",

abstract = "One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+ -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.",

author = "Lei Zhang and Liang Zhu and Xiaomei Li and Zhi Xu and Wenlong Wang and Xuedong Bai",

year = "2017",

month = mar,

day = "21",

doi = "10.1038/srep45143",

language = "英语",

volume = "7",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Research",

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TY - JOUR

T1 - Resistive switching mechanism in the one diode-one resistor memory based on p+ -Si/n-ZnO heterostructure revealed by in-situ TEM

AU - Zhang, Lei

AU - Zhu, Liang

AU - Li, Xiaomei

AU - Xu, Zhi

AU - Wang, Wenlong

AU - Bai, Xuedong

PY - 2017/3/21

Y1 - 2017/3/21

N2 - One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+ -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

AB - One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+ -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

UR - https://www.scopus.com/pages/publications/85016070281

U2 - 10.1038/srep45143

DO - 10.1038/srep45143

M3 - 文章

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JO - Scientific Reports

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ER -

Resistive switching mechanism in the one diode-one resistor memory based on p⁺ -Si/n-ZnO heterostructure revealed by in-situ TEM

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