RESET distribution improvement of phase change memory: The impact of pre-programming

Yuchan Wang; Xiaogang Chen; Yan Cheng; Xilin Zhou; Shilong Lv; Yifeng Chen; Yueqing Wang; Mi Zhou; Houpeng Chen; Yiyun Zhang; Zhitang Song; Gaoming Feng

doi:10.1109/LED.2014.2308909

RESET distribution improvement of phase change memory: The impact of pre-programming

Yuchan Wang
, Xiaogang Chen
, Yan Cheng
, Xilin Zhou
, Shilong Lv
, Yifeng Chen
, Yueqing Wang
, Mi Zhou
, Houpeng Chen
, Yiyun Zhang
, Zhitang Song
, Gaoming Feng

CAS - Shanghai Institute of Microsystem and Information Technology
Semiconductor Manufacturing International Corporation Shanghai

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Some nonvolatile phase change memory (PCM) cells with 80-nm heating electrodes are found very difficult to RESET at 3 mA, which directly affects the RESET distribution of the PCM. The large crystal grains with hexagonal structure in the active phase change area, discovered by transmission electron microscope, are the major reason. One preprogramming testing method is introduced, and the resistance distributions of the PCM cells before and after preprogramming are presented. Results show that the large hexagonal crystal grains have been eliminated, thus the resistance distributions have been greatly improved after preprogramming.

Original language	English
Article number	6767089
Pages (from-to)	536-538
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	5
DOIs	https://doi.org/10.1109/LED.2014.2308909
State	Published - May 2014
Externally published	Yes

Keywords

Phase change memory (PCM)
RESET
pre-programming.
resistance distribution

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10.1109/LED.2014.2308909

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title = "RESET distribution improvement of phase change memory: The impact of pre-programming",

abstract = "Some nonvolatile phase change memory (PCM) cells with 80-nm heating electrodes are found very difficult to RESET at 3 mA, which directly affects the RESET distribution of the PCM. The large crystal grains with hexagonal structure in the active phase change area, discovered by transmission electron microscope, are the major reason. One preprogramming testing method is introduced, and the resistance distributions of the PCM cells before and after preprogramming are presented. Results show that the large hexagonal crystal grains have been eliminated, thus the resistance distributions have been greatly improved after preprogramming.",

keywords = "Phase change memory (PCM), RESET, pre-programming., resistance distribution",

author = "Yuchan Wang and Xiaogang Chen and Yan Cheng and Xilin Zhou and Shilong Lv and Yifeng Chen and Yueqing Wang and Mi Zhou and Houpeng Chen and Yiyun Zhang and Zhitang Song and Gaoming Feng",

year = "2014",

month = may,

doi = "10.1109/LED.2014.2308909",

language = "英语",

volume = "35",

pages = "536--538",

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TY - JOUR

T1 - RESET distribution improvement of phase change memory

T2 - The impact of pre-programming

AU - Wang, Yuchan

AU - Chen, Xiaogang

AU - Cheng, Yan

AU - Zhou, Xilin

AU - Lv, Shilong

AU - Chen, Yifeng

AU - Wang, Yueqing

AU - Zhou, Mi

AU - Chen, Houpeng

AU - Zhang, Yiyun

AU - Song, Zhitang

AU - Feng, Gaoming

PY - 2014/5

Y1 - 2014/5

N2 - Some nonvolatile phase change memory (PCM) cells with 80-nm heating electrodes are found very difficult to RESET at 3 mA, which directly affects the RESET distribution of the PCM. The large crystal grains with hexagonal structure in the active phase change area, discovered by transmission electron microscope, are the major reason. One preprogramming testing method is introduced, and the resistance distributions of the PCM cells before and after preprogramming are presented. Results show that the large hexagonal crystal grains have been eliminated, thus the resistance distributions have been greatly improved after preprogramming.

AB - Some nonvolatile phase change memory (PCM) cells with 80-nm heating electrodes are found very difficult to RESET at 3 mA, which directly affects the RESET distribution of the PCM. The large crystal grains with hexagonal structure in the active phase change area, discovered by transmission electron microscope, are the major reason. One preprogramming testing method is introduced, and the resistance distributions of the PCM cells before and after preprogramming are presented. Results show that the large hexagonal crystal grains have been eliminated, thus the resistance distributions have been greatly improved after preprogramming.

KW - Phase change memory (PCM)

KW - RESET

KW - pre-programming.

KW - resistance distribution

UR - https://www.scopus.com/pages/publications/84899984768

U2 - 10.1109/LED.2014.2308909

DO - 10.1109/LED.2014.2308909

M3 - 文章

AN - SCOPUS:84899984768

SN - 0741-3106

VL - 35

SP - 536

EP - 538

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 6767089

ER -

RESET distribution improvement of phase change memory: The impact of pre-programming

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Keywords

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