TY - JOUR
T1 - RESET distribution improvement of phase change memory
T2 - The impact of pre-programming
AU - Wang, Yuchan
AU - Chen, Xiaogang
AU - Cheng, Yan
AU - Zhou, Xilin
AU - Lv, Shilong
AU - Chen, Yifeng
AU - Wang, Yueqing
AU - Zhou, Mi
AU - Chen, Houpeng
AU - Zhang, Yiyun
AU - Song, Zhitang
AU - Feng, Gaoming
PY - 2014/5
Y1 - 2014/5
N2 - Some nonvolatile phase change memory (PCM) cells with 80-nm heating electrodes are found very difficult to RESET at 3 mA, which directly affects the RESET distribution of the PCM. The large crystal grains with hexagonal structure in the active phase change area, discovered by transmission electron microscope, are the major reason. One preprogramming testing method is introduced, and the resistance distributions of the PCM cells before and after preprogramming are presented. Results show that the large hexagonal crystal grains have been eliminated, thus the resistance distributions have been greatly improved after preprogramming.
AB - Some nonvolatile phase change memory (PCM) cells with 80-nm heating electrodes are found very difficult to RESET at 3 mA, which directly affects the RESET distribution of the PCM. The large crystal grains with hexagonal structure in the active phase change area, discovered by transmission electron microscope, are the major reason. One preprogramming testing method is introduced, and the resistance distributions of the PCM cells before and after preprogramming are presented. Results show that the large hexagonal crystal grains have been eliminated, thus the resistance distributions have been greatly improved after preprogramming.
KW - Phase change memory (PCM)
KW - RESET
KW - pre-programming.
KW - resistance distribution
UR - https://www.scopus.com/pages/publications/84899984768
U2 - 10.1109/LED.2014.2308909
DO - 10.1109/LED.2014.2308909
M3 - 文章
AN - SCOPUS:84899984768
SN - 0741-3106
VL - 35
SP - 536
EP - 538
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 5
M1 - 6767089
ER -