Research of graphene/antireflection nanostructure composite transparent conducting films

The graphene film was directly deposited on SiO₂ antireflection(AR) structure by remote catalyzation of Cu nanoparticles using chemical vapor deposition method to fabricate the transparent conducting films with graphene/AR composite structure. Continuous graphene hollow sphere array was obtained after removing SiO₂ AR structure, and the peak intensity ratios of I_2D/I_G and I_D/I_G and the full-width at half-height maximum (FWHM) of the 2D peak in the Raman spectrum of the graphene grew in 10 min were 2.31, 0.77 and about 40 cm^-1, respectively, which demonstrated that the continuous and low-defect few layer graphene was grown on the surface of SiO₂ AR structure. By introducing the SiO₂ AR structure, transmittance of the film increases by 5.5% at 550 nm and the sheet resistance decreases by 20.09% on the average. Data from this study suggest that this film can avoid complex transfer process, decrease damage, and on the meantime realize high transparency and high conductivity performance, showing obvious applicable prospects in the field of photovoltaic devices, flat panel display and so on.