reparation and performance of micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP ferroelectric thin film arrays

Feng Juan Miao; Bai Rui Tao; Zhi Gao Hu; Jun Hao Chu

doi:10.3724/SP.J.1010.2014.00139

reparation and performance of micro/nano-scale Bi_3.15Nd_0.85Ti₃O₁₂/Si-MCP ferroelectric thin film arrays

Feng Juan Miao, Bai Rui Tao, Zhi Gao Hu, Jun Hao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

The micro/nano-scale Bi_3.15Nd_0.85Ti₃O₁₂/Si-MCP (BNT/Si-MCP) ferroelectric thin film arrays were fabricated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the inner wall of Si-MCP. Bi_3.15Nd_0.85Ti₃O₁₂ thin film supported by Si-MCP were prepared via annealing in oxygen atmosphere at 600°C, 650°C, 700°C and 750°C, respectively. The ferroelectric properties and microstructures of BNT/Si-MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization (93.8 μC/cm²) and lowest leakage current of the micro/nano-scale BNT/Si-MCP arrays were obtained annealing at 750°C.

Original language	English
Pages (from-to)	139-142+148
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	33
Issue number	2
DOIs	https://doi.org/10.3724/SP.J.1010.2014.00139
State	Published - Apr 2014

Keywords

BNT
Ferroelectric films
Micro-nano film arrays
Si MCP

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10.3724/SP.J.1010.2014.00139

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@article{61cbdcc6195d468a8e3c689228cdc350,

title = "reparation and performance of micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP ferroelectric thin film arrays",

abstract = "The micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP (BNT/Si-MCP) ferroelectric thin film arrays were fabricated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the inner wall of Si-MCP. Bi3.15Nd0.85Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmosphere at 600°C, 650°C, 700°C and 750°C, respectively. The ferroelectric properties and microstructures of BNT/Si-MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization (93.8 μC/cm2) and lowest leakage current of the micro/nano-scale BNT/Si-MCP arrays were obtained annealing at 750°C.",

keywords = "BNT, Ferroelectric films, Micro-nano film arrays, Si MCP",

author = "Miao, \{Feng Juan\} and Tao, \{Bai Rui\} and Hu, \{Zhi Gao\} and Chu, \{Jun Hao\}",

year = "2014",

month = apr,

doi = "10.3724/SP.J.1010.2014.00139",

language = "英语",

volume = "33",

pages = "139--142+148",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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publisher = "Chinese Optical Society",

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T1 - reparation and performance of micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP ferroelectric thin film arrays

AU - Miao, Feng Juan

AU - Tao, Bai Rui

AU - Hu, Zhi Gao

AU - Chu, Jun Hao

PY - 2014/4

Y1 - 2014/4

N2 - The micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP (BNT/Si-MCP) ferroelectric thin film arrays were fabricated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the inner wall of Si-MCP. Bi3.15Nd0.85Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmosphere at 600°C, 650°C, 700°C and 750°C, respectively. The ferroelectric properties and microstructures of BNT/Si-MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization (93.8 μC/cm2) and lowest leakage current of the micro/nano-scale BNT/Si-MCP arrays were obtained annealing at 750°C.

AB - The micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP (BNT/Si-MCP) ferroelectric thin film arrays were fabricated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the inner wall of Si-MCP. Bi3.15Nd0.85Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmosphere at 600°C, 650°C, 700°C and 750°C, respectively. The ferroelectric properties and microstructures of BNT/Si-MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization (93.8 μC/cm2) and lowest leakage current of the micro/nano-scale BNT/Si-MCP arrays were obtained annealing at 750°C.

KW - BNT

KW - Ferroelectric films

KW - Micro-nano film arrays

KW - Si MCP

UR - https://www.scopus.com/pages/publications/84900511544

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DO - 10.3724/SP.J.1010.2014.00139

M3 - 文章

AN - SCOPUS:84900511544

SN - 1001-9014

VL - 33

SP - 139-142+148

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 2

ER -

reparation and performance of micro/nano-scale Bi_3.15Nd_0.85Ti₃O₁₂/Si-MCP ferroelectric thin film arrays

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